Ferroelectric HfO<sub>2</sub> for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

François, T.; Coignus, J.; Grenouillet, L.; Barnes, Jean‐Paul; Vaxelaire, Nicolas; Ferrand, Jérôme; Bottala-Gambetta, Ivane; Gros-Jean, M.; Jeannot, S.; Boivin, P.; Chiquet, P.; Bocquet, Marc; Nowak, E.; Gaillard, F.

doi:10.1109/imw.2019.8739664

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…might come at the expense of the others. The so-called "polarization-endurance dilemma" is arguably the most important one, as it clearly indicates that increasing Pr (to increase MW) leads to reduced endurance in HfO2-FeCAPs [12], [15], [62], [64], [134]. This trade-off also affects FeFETs, leading to endurance-MW and endurance-retention dilemmas, as shown in Fig.…”

Section: Trade-offs Among the Metricsmentioning

confidence: 99%

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

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Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and lowpower operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. There is a broad consensus that a deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this paper, we review the current understanding of the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at device-level (i.e., retention, endurance, variability) based on the physical mechanisms previously identified. Our integrative theoretical framework connects apparently unrelated reliability issues and suggests mitigation strategies at either device, circuit, and system level. We conclude the paper by proposing a set of research opportunities to guide future development in this field.

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Section: Trade-offs Among the Metricsmentioning

confidence: 99%

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

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“…10 varies, i.e. different polarization values and dynamics are expected [23]. In the meantime, the magnitude of evolution of dielectric variables through wake-up phenomena is expected to be of a lower value, e.g.…”

Section: Endurance Performance Of the 16kbit Arraymentioning

confidence: 99%

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays

François

Coignus

Makosiej

et al. 2022

IEEE Trans. Electron Devices

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16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). 0 state and 1 state distributions measured on the arrays demonstrate perfect yield at 4.8V operation, with extrapolations suggesting memory window is still open at 6 sigma statistics. Programming speed down to 4ns at 4V is highlighted at the array level, together with endurance up to 10 7 cycles. Promising data retention up to 10 4 s at 125°C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. Memory window on 16kbit arrays remains open down to 2.5V programming voltage and when capacitor area decreases from 0.36µm² down to 0.16µm², with calculated programming energy lower than 100fJ/bit. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.

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“…Materials based on hafnium oxide (HfO 2 ) offer remarkable combinations of ferroelectricity, high dielectric permittivity, high energy barriers and high thermodynamic stability, which are of particular interest for next-generation high-κ gate dielectrics in microelectronics or nonvolatile memories, variable capacitors, biosensors, actuators and energy storage/harvesting devices [1][2][3][4]. These chemical and physical properties are known to be highly dependent on the presence of atomic defects and the amorphous nature or various crystal structures of HfO 2 , i.e., monoclinic (space group P2 1 /c, the most stable at low temperature), tetragonal (P4 2 /nmc), orthorhombic (Pca2 1 ) and cubic (Fm3m) [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning

et al. 2022

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In the frame of the nanoarchitectonic concept, the objective of this study was to develop simple and easy methods to ensure the preparation of polymorphic HfO2 thin film materials (<200 nm) having the best balance of patterning potential, reproducibility and stability to be used in optical, sensing or electronic fields. The nanostructured HfO2 thin films with micropatterns or continuous morphologies were synthesized by two different methods, i.e., the micropatterning of sol-gel solutions by deep ultraviolet (DUV) photolithography or the electrophoretic deposition (EPD) of HfO2 nanoparticles (HfO2-NPs). Amorphous and monoclinic HfO2 micropatterned nanostructured thin films (HfO2-DUV) were prepared by using a sol-gel solution precursor (HfO2-SG) and spin-coating process following by DUV photolithography, whereas continuous and dense monoclinic HfO2 nanostructured thin films (HfO2-EPD) were prepared by the direct EPD of HfO2-NPs. The HfO2-NPs were prepared by a hydrothermal route and studied through the changing aging temperature, pH and reaction time parameters to produce nanocrystalline particles. Subsequently, based on the colloidal stability study, suspensions of the monoclinic HfO2-NPs with morphologies near spherical, spindle- and rice-like shapes were used to prepare HfO2-EPD thin films on conductive indium-tin oxide-coated glass substrates. Morphology, composition and crystallinity of the HfO2-NPs and thin films were investigated by powder and grazing incidence X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV-visible spectrophotometry. The EPD and DUV photolithography performances were explored and, in this study, it was clearly demonstrated that these two complementary methods are suitable, simple and effective processes to prepare controllable and tunable HfO2 nanostructures as with homogeneous, dense or micropatterned structures.

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Ferroelectric HfO₂ for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Cited by 4 publications

References 7 publications

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning

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Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Cited by 4 publications

References 7 publications

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning

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Ferroelectric HfO₂ for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays