Ferroelectric HfZrO&lt;inf&gt;x&lt;/inf&gt; Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I&lt;inf&gt;ds&lt;/inf&gt;

Zhou, Jiuren; Han, Genquan; Li, Qinglong; Peng, Yue; Lü, Xiaoli; Zhang, Chunfu; Zhang, Jincheng; Sun, Qizhen; Zhang, David Wei; Hao, Yue

doi:10.1109/iedm.2016.7838401

Cited by 85 publications

(48 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fact that the ferroelectric material can exhibit such a state of negative capacitance has already been demonstrated. 3,4,[6][7][8][9][10][11][12][13][14][15][16][17][18] Therefore, if another dielectric capacitor is placed in series with the ferroelectric [as shown schematically in Fig. 1(b)], a voltage amplification is expected across the dielectric capacitor.…”

mentioning

confidence: 99%

Differential voltage amplification from ferroelectric negative capacitance

Khan

Hoffmann

Chatterjee

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capacitors cannot provide amplification all by themselves. Here, we demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only, has fundamental ramifications for next generation electronics. Free Energy Charge C<0 a Time Source Voltage Ferroelectric Capacitor Voltage Amplification b FIG. 1: Voltage amplification due to ferroelectric negative capacitance: (a) Energy landscape of a ferroelectric capacitor. The capacitance, C, is negative in the region enclosed by the dashed box. (b) The experimental setup.

show abstract

mentioning

confidence: 99%

Differential voltage amplification from ferroelectric negative capacitance

Khan

Hoffmann

Chatterjee

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…5(b) and (c), NCFETs show negative differential resistance (NDR) [16] [30], which is a distinctive feature that is not seen in the conventional MOSFET. In a Gunn diode, known as a transferred-electron device, NDR is induced by the transition of electrons from a high-mobility valley to a low-mobility valley [31].…”

Section: B Drain-induced Barrier Raising (Dibr)mentioning

confidence: 99%

Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

Seo

Lee

Shin

2017

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-We investigate the performance of hysteresisfree short-channel negative-capacitance field-effect transistors (NCFETs) by combining quantum mechanical calculations with the Landau-Khalatnikov equation. When the subthreshold swing (SS) becomes smaller than 60 mV/dec, a negative value of draininduced barrier lowering (DIBL) is obtained. This behavior, drain-induced barrier rising (DIBR), causes negative differential resistance (NDR) in the output characteristics of NCFETs. We also examine the performance of an inverter composed of hysteresis-free NCFETs to assess the effects of DIBR at the circuit level. Contrary to our expectation, although hysteresisfree NCFETs are used, hysteresis behavior is observed in the transfer properties of the inverter. Furthermore, it is expected that the NCFET inverter with hysteresis behavior can be used as a Schmitt trigger inverter.Index Terms-Subthreshold swing, ferroelectric, negative capacitance FET, hysteresis behavior, drain-induced barrier lowering, Schmitt trigger inverter

show abstract

“…Several models of quasi-static NC associated with domain wall motion in a multiple-domain system have been also proposed [9][10][11][12][13] . Meanwhile, steep SS values have been demonstrated by incorporating FE/PE gate stacks into FETs with various FE materials [14][15][16] , various channel materials 15,[17][18][19] and various FET structures 14,[20][21][22][23][24] .…”

mentioning

confidence: 99%

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Toriumi

2020

Nat Commun

View full text Add to dashboard Cite

Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxidesemiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs.

show abstract

Ferroelectric HfZrO<inf>x</inf> Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I<inf>ds</inf>

Cited by 85 publications

References 8 publications

Differential voltage amplification from ferroelectric negative capacitance

Differential voltage amplification from ferroelectric negative capacitance

Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Contact Info

Product

Resources

About