Ferroelectric HfZrO2 FETs for steep switch onset

Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, Chieh; Siang, G.-Y.; Lin, Yun Lung; Tseng, Yi-Ju; Chang, Chienliu; Chueh, C.-Y.; Yang, Y.-J.; Liao, Ming-Han; Li, K.-S.; Chang, Shu−Tong; Lee, M.H.

doi:10.1016/j.mee.2019.110991

Cited by 7 publications

(1 citation statement)

References 7 publications

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“…The technique is lead-free and environment-friendly compared to techniques using conventional ferroelectric (FE) materials such as perovskite ABO 3 , PbZr 0.5 Ti 0.5 O 3 (PZT) and Pb 0.99 Nb 0.02 [(Zr 0.57 Sn 0.43 ) 1−y Ti y ] 0.98 O 3 (PNZST) [3,4]. Recently, ultra-thin HfZrO 2 (HZO) less than 10 nm in thickness was demonstrated for ferroelectricity and steep current switching on field-effect transistor (FET) performance [5,6]. The FE gate integrated with an advanced FET process is one possible solution to improve subthreshold swing (SS) for future node path finding [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Chen¹,

Liao²,

Hsiang³

et al. 2020

Semicond. Sci. Technol.

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Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau–Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.

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Section: Introductionmentioning

confidence: 99%

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Chen¹,

Liao²,

Hsiang³

et al. 2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

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Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Hsu

Liu

Lee

et al. 2021

Ceramics International

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Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Huo

Huang

Zhang

et al. 2021

Microelectronics Journal

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Ferroelectric HfZrO2 FETs for steep switch onset

Cited by 7 publications

References 7 publications

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

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Ferroelectric HfZrO2 FETs for steep switch onset

Cited by 7 publications

References 7 publications

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Contact Info

Product

Resources

About

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂