Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

Zhou, Jiuren; Han, Genquan; Peng, Yue; Liu, Yan; Zhang, Jincheng; Sun, Qizhen; Zhang, David Wei; Hao, Yue

doi:10.1109/led.2017.2714178

Cited by 76 publications

(29 citation statements)

References 18 publications

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“…This could be ascribed to the potential etch damages along the fin sidewalls. On the other hand, stronger ferroelectric properties are shown on the large device dimension (W = 400 nm), which is consistent with other FeFETs papers [10]- [14]. Fig.…”

Section: Results and Discussion A Effect Of Fga On Fefetssupporting

confidence: 90%

“…However, FinFET with a narrow channel width has a serious fin sidewall roughness issue and a higher density of traps (Dit) [9], which could deteriorate SS of ferroelectric FinFET. According to works of literature, FeFETs with a broad channel width often show SS below 60 mV/dec is over two orders of magnitude of I D [10]- [14]. However, as a ferroelectric material is applied to nanoscale structures, such as FinFET or nanowire, SS below 60 mV/dec is often under two orders of magnitude of I D [6]- [7], [15]- [18].…”

Section: Introductionmentioning

confidence: 99%

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Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Sung

et al. 2020

IEEE J. Electron Devices Soc.

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In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity but also significantly improve FeFET electrostatics. The experimental results indicate that FeFET with a narrow width shows weaker ferroelectric properties, and SS of sub-60 mV/dec with I D change less than two orders of magnitude. However, FeFET with a broad channel width reveals stronger ferroelectric properties, and SS of sub-60 mV/dec is over 2 orders of magnitude of I d. Finally, typical voltage transfer characteristics (VTCs) of a FeFET CMOS inverter with double sweeps at various V D from 0.6 to 2 V are demonstrated. The results show that hysteresis in a FeFET CMOS inverter could have both clockwise (CW) and counterclockwise (CCW) loops. INDEX TERMS FeFET, forming gas annealing (FGA), steep slop, HfZrO 2 , ferroelectric.

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Section: Results and Discussion A Effect Of Fga On Fefetssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Sung

et al. 2020

IEEE J. Electron Devices Soc.

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“…This will decrease the threshold voltage after the negative gate pulse [52]. If the applied voltage exceeds the coercive voltage in the HZO film, ferroelectric polarization mechanism dominates and will cause anti-clockwise hysteresis window [54][55][56][57]. Thus, it is easily concluded that the electrical performance of the device shown in Fig.…”

Section: Supplementary Informationmentioning

confidence: 97%

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

et al. 2020

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Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf 1-x Zr x O 2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the fewlayered molybdenum disulfide (MoS 2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 10 7 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (10 3 cycles) and retention (10 4 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS 2 ferroelectric memory transistor can achieve new opportunities in size-and voltage-scalable non-volatile memory applications.

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“…The ferroelectric negative capacitance field-effect transistor (NCFET) with a ferroelectric film inserted into gate stack is a promising candidate for the low-power dissipation applications owing to its ability to overcome the fundamental limitation in subthreshold swing (SS) for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) [1]. The negative capacitance (NC) phenomena in NCFETs have been extensively studied in different channel materials, including silicon (Si) [2, 3], germanium (Ge) [4], germanium-tin (GeSn) [5], III–V [6], and 2D materials [7]. Also, the NC characteristics have been demonstrated in NCFETs with various ferroelectrics, such as BiFeO 3 [8], PbZrTiO 3 (PZT) [9], PVDF [10], and Hf 1− x Zr x O 2 [11].…”

Section: Introductionmentioning

confidence: 99%

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2

et al. 2019

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Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf 1− x Zr x O 2 ( x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current I DS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage V GS corresponding to steep SS are consistent and clockwise I DS - V GS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf 0.52 Zr 0.48 O 2 achieves the higher I DS but larger hysteresis compared to the other compositions. NCFET with Hf 0.67 Zr 0.33 O 2 can obtain the excellent performance with hysteresis-free curves and high I DS .

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Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

Cited by 76 publications

References 18 publications

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2

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