Ferroelectric non-volatile memories for low-voltage, low-power applications

Jones, Robert E.; Maniar, P.; Moazzami, R.; Zürcher, P.; Witowski, J.; Lii, Y. T.; Chu, Peir; Gillespie, S.J.

doi:10.1016/0040-6090(95)06754-x

Cited by 128 publications

(60 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3] Two terminal switching devices are, however, attractive candidates for 2D crossbar circuitry and, in fact, crossbar-based random access memories have been investigated for many years. Most work has focused on ferroelectric [17] and magnetoresistive [18] crosspoint memories-FeRAM and MagRAM, respectively. The electrical resistance of these junctions exhibits a hysteretic response to an applied field and so they may serve as the basis for nonvolatile information storage.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Molecular Electronics Circuits

Luo

Collier

Jeppesen

et al. 2002

Chem. Eur. J. of Chem. Phys.

570

437

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Molecular Electronics Circuits

Luo

Collier

Jeppesen

et al. 2002

Chem. Eur. J. of Chem. Phys.

570

437

View full text Add to dashboard Cite

show abstract

“…These properties make them useful for high performance capacitors, piezoelectric sensors and actuators, pyroelectric detectors, electro-optic switches, electrocaloric coolers, polarization based non-volatile memories, and multiferroic sensors and switches. [1][2][3][4][5][6] A commonality of these applications is that they require the application of a sizable electric field, and this necessitates that the ferroelectric materials be insulating. Consequently, much less attention has been paid to the application possibilities for ferroelectric materials that are electrically conducting.…”

Section: Introductionmentioning

confidence: 99%

Polarization-based perturbations to thermopower and electronic conductivity in highly conductive tungsten bronze structured(Sr,Ba)Nb2O6: Relaxors vs normal ferroele

et al. 2014

View full text Add to dashboard Cite

Electrical conductivity, thermopower, and lattice strain were investigated in the tetragonal tungsten bronze structured (Sr x ,Ba 1-x )Nb 2 O 6-δ system for 0.7>x>0.4 with large values of δ. These materials show attractive thermoelectric characteristics, especially in single crystal form. Here, the Sr/Ba ratio was changed in order to vary the material between a normal ferroelectric with long range polarization to relaxor behavior with short-range order and dynamic polarization. The influence of this on the electrical conduction mechanisms was then investigated. The temperature dependence of both the thermopower and differential activation energy for conduction suggests that the electronic conduction is controlled by an impurity band with a mobility edge separating localized and delocalized states. Conduction is controlled via hopping at low temperatures, and as temperature rises electrons are activated above the mobility edge, resulting in a large increase in electrical conductivity. For relaxor ferroelectric based compositions, when dynamic short-range order polarization is present in the system, trends within the differential activation energy and thermopower show deviations from this conduction mechanism. The results are consistent with the polarization acting as a source of disorder which affects the location of the mobility edge and, therefore, the activation energy for conduction.

show abstract

“…7 The non-destructive read and write process in resistive RAMs also gives it an advantage over conventional ferroelectric-RAMs. 8 Thus arose the possibility of graphene-based memory devices that can function as resistive memories. Integration of graphene with ferroelectrics offers a possible way to overcome graphene's lack of a band-gap and utilize its ambivalent conduction while introducing non-volatile functionality.…”

mentioning

confidence: 99%

Long-term retention in organic ferroelectric-graphene memories

Raghavan

Stolichnov

Setter

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Long-term stability of high- and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully saturated time-dependence of the graphene channel resistance. This behavior is in contrast with ferroelectric-polymer-gated silicon field-effect-transistors, where the gap between the two memory states continuously decreases with time. Before reaching saturation, the current decays exponentially as predicted by the retention model based on the charge injection into the interface-adjacent layer. The drain current saturation attests to a high quality of the graphene/ferroelectric interface with low density of charge traps.

show abstract

Ferroelectric non-volatile memories for low-voltage, low-power applications

Cited by 128 publications

References 6 publications

Two-Dimensional Molecular Electronics Circuits

Two-Dimensional Molecular Electronics Circuits

Polarization-based perturbations to thermopower and electronic conductivity in highly conductive tungsten bronze structured(Sr,Ba)Nb2O6: Relaxors vs normal ferroele

Long-term retention in organic ferroelectric-graphene memories

Contact Info

Product

Resources

About