Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y-Ba-Cu-O

Ramesh, R.; Inam, A.; Chan, W.K.; Tillerot, F.; Wilkens, B.; Chang, Chih-Chung; Sands, T.; Tarascon, J. M.; Keramidas, V. G.

doi:10.1063/1.105651

Cited by 107 publications

(20 citation statements)

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“…Especially, Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 [PLZT in the rest of this paper] is in the ferroelectric tetragonal region with suitable Curie temperature for application in hybrid electric vehicles. Polycrystalline films fabricated by chemical solution deposition exhibited a high energy storage density of 22 J/cm 3 and electric efficiency of 77%, demonstrating that it is promising for applications in capacitors for power electronic systems and energy storage.…”

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confidence: 99%

“…[3][4][5] In particular, Pb(Zr 0.52 Ti 0.48 )O 3 with a low coercive field and high remnant polarization 6 has been widely investigated for application in microwave devices, 7 energy storage, and capacitance. 8 However, the common Pb loss induced a large number of oxygen vacancies, which locate typically at grain boundaries or/and at the interfaces between PZT and electrodes.…”

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confidence: 99%

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Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

et al. 2014

Applied Physics Letters

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High quality c-axis oriented epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films were fabricated using pulsed laser deposition on (001) LaAlO3 substrates with conductive LaNiO3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb0.92La0.08Zr0.52Ti0.48O3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices.

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Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

et al. 2014

Applied Physics Letters

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“…Indeed, a variety of fascinating properties have been evidenced in YBCO-based junctions. [171][172][173][174][175] Epitaxial growth of BFO/YBCO heterostructure can be realized due to the compatible lattice structure in the two materials with a lattice mismatch of $3%. Interfacial couplings in such heterostructures may drastically upset the delicate balance of the competing interactions among charges, spins, orbitals, and lattice, which can potentially present a wide range of emergent phenomena.…”

Section: Multiferroic/ferromagnetic Heterostructuresmentioning

confidence: 99%

Multiferroic oxide thin films and heterostructures

Tian

et al. 2015

Applied Physics Reviews

144

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Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

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“…Besides, the ferroelectric films were found to exhibit strong fatigue with Pt electrodes, which degrades not only the ferroelectric property but also piezoelectric property [3]. The perovskitetype metallic oxides, such as SrRuO 3 , (La,Sr)-CoO 3 , LaNiO 3 , and YBa 2 Cu 3 O 7Àx , have been demonstrated to provide improvement in crystallinity and against fatigue due to their excellent chemical and structural compatibility with PZT [4][5][6][7]. So far, considerable effort has been made to the preparation of epitaxial PZT films on those perovskite-type metallic oxides by various deposition methods, which show enhanced electrical properties [8][9][10][11].…”

Section: Introductionmentioning

confidence: 98%