1998
DOI: 10.1063/1.122269
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Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates

Abstract: Articles you may be interested inGrowth, microstructure, and ferroelectric properties of Pb ( Zr 0.4 Ti 0.6 ) O 3 ∕ Pb Zr O 3 superlattices prepared on Sr Ti O 3 (100) substrates by pulsed laser deposition

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Cited by 61 publications
(22 citation statements)
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“…For last few years, the YMnO 3 thin film has attracted interest as a candidate for application to the nonvolatile ferroelectric random access memory because YMnO 3 has good retention property [4][5][6][7]. YMnO 3 films have been synthesized by various techniques such as molecular beam epitaxy (MBE) [5,6], pulsed laser deposition (PLD) [7][8][9][10][11][12], sputtering [13][14][15], and chemical solution routes [16][17][18][19][20][21][22]. Imada et al [5] and Ito et al [7] reported that YMnO 3 films synthesized by MBE and PLD on (1 1 1)Pt/(0 0 0 1)Al 2 O 3 and (1 1 1)Y 2 O 3 /(1 1 1)Si grew epitaxially and displayed the full width half maximum (FWHM) of about 0.7 in X-ray diffraction rocking curve.…”
Section: Introductionmentioning
confidence: 99%
“…For last few years, the YMnO 3 thin film has attracted interest as a candidate for application to the nonvolatile ferroelectric random access memory because YMnO 3 has good retention property [4][5][6][7]. YMnO 3 films have been synthesized by various techniques such as molecular beam epitaxy (MBE) [5,6], pulsed laser deposition (PLD) [7][8][9][10][11][12], sputtering [13][14][15], and chemical solution routes [16][17][18][19][20][21][22]. Imada et al [5] and Ito et al [7] reported that YMnO 3 films synthesized by MBE and PLD on (1 1 1)Pt/(0 0 0 1)Al 2 O 3 and (1 1 1)Y 2 O 3 /(1 1 1)Si grew epitaxially and displayed the full width half maximum (FWHM) of about 0.7 in X-ray diffraction rocking curve.…”
Section: Introductionmentioning
confidence: 99%
“…Both experimentally [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] and theoretically [19][20][21][22][23][24][25][26][27][28], the polarization can be changed in direction via a dynamic switching process accompanied by hysteresis [9,[28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47]. Some of the partially understood experimental properties of ferroelectric domains [27,[48]…”
Section: Introductionmentioning
confidence: 99%
“…Some of the partially understood experimental properties of ferroelectric domains [27,[48][49][50][51][52][53][54][55][56][57][58] include the following: (i) No unique coercive field is evident during the hysteretic process of switching. [28][29][30][31][32][33][34][35][36][37][38][39] (ii) When an alternating electric field is applied, a hysteretic loop is observed only within a limited frequency band and a limited range of the amplitude-frequency product. [9,[43][44][45][46] (iii) Formation of multiple hysteresis loops [47] are commonly observed.…”
Section: Introductionmentioning
confidence: 99%
“…Various techniques, including chemical solution deposition (CSD) 19 , sol-gel, and metal-organic chemical vapor deposition (MOCVD) 20 , molecular beam epitaxy (MBE) 21 , sputtering 22 and pulsed laser deposition (PLD) 23 etc. have been employed successfully to fabricate YMnO 3 thin films.…”
mentioning
confidence: 99%