Ferroelectric properties of manganese doped (Bi1/2Na1/2)TiO3 and (Bi1/2Na1/2)TiO3–BaTiO3 epitaxial thin films

Flores-Gallegos, Adriana C.; Espinosa-Arbeláez, D.G.; Flores-Ruiz, Francisco Javier; Lahmar, Abdelilah; Dellis, J.‐L.; Lemée, N.; Espinoza‐Beltrán, F.J.; Muñoz-Saldaña, J.

doi:10.1016/j.apsusc.2015.09.175

Cited by 33 publications

(12 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The targets used for the deposition were prepared by means of a solid-state reaction from Bi 2 O 3 , Na 2 CO 3 , BaTiO 3 , and TiO 2 powders. They contained 40 mol % excessive Bi 2 O 3 and Na 2 CO 3 nominally to compensate the loss of these elements due to their high vapor pressure during the ceramic sintering process of the target and/or the film deposition process, according to the previous reports on films containing BNT. − …”

Section: Methodsmentioning

confidence: 99%

“…Another Pb-free candidate with a moderate tetragonality is a solid solution of (1 – x )(Bi 0.5 Na 0.5 )TiO 3 - x BaTiO 3 . , This solid solution is a potential Pb-free piezoelectric material with a phase boundary between the rhombohedral and tetragonal phases at x ≈ 0.06. , The rhombohedral phase is found only in the region where the content of BaTiO 3 , x , is very low, while the tetragonal phase is obtained for x > 0.06. Interestingly, tetragonality is ∼1.02 for a broad range of x from 0.15 to 0.6. ,, However, most studies employed (1 – x )(Bi 0.5 Na 0.5 )TiO 3 - x BaTiO 3 -based piezoelectric films with x < 0.15 because of their close composition to the MPB. − Only a few studies utilize films with a moderate value of x from 0.15 to 0.6, intending to exploit the anisotropy of the tetragonal phase and domain switching.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Strong electromechanical coupling is observed in tetragonal Pb-free 0.7(Bi 0.5 Na 0.5 )-TiO 3 -0.3BaTiO 3 films, which is far from the morphotropic phase boundary, prepared by pulsed laser deposition on a Si substrate. The tensile strain induced during cooling causes in-plane polarization in an oriented film on a Si substrate, while an epitaxial film grown on a SrTiO 3 substrate exhibits out-ofplane polarization. S−E curve analysis reveals that the obtained piezoelectric coefficient for the film on the Si substrate (d 33,f ≈ 275 pm/V) is approximately eight times higher than that for the epitaxial film on the SrTiO 3 substrate (d 33,f ≈ 34 pm/V). In situ X-ray diffraction analysis confirms the occurrence of domain switching under an electric field from in-plane to out-of-plane polarization. An effective piezoelectric stress coefficient, e 31,eff , of ∼19 C/m 2 is obtained from a Si cantilever sample, which is the highest among the reported values for Pb-free piezoelectric films and is comparable to those for Pb-based films. The significant piezoelectric response produced by domain switching in the Pb-free materials with the composition far from the morphotropic phase boundary will expand future applications due to their both outstanding properties and environmental sustainability.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…In summary, whereas an epitaxial growth of NBT-based thin films was demonstrated, a further optimization of the film microstructure is required to reduce the roughness as well as the leakage currents at elevated temperatures. An additional doping with Mn or changes in the stoichiometry might help to improve these properties as discussed by other groups [30,43].…”

Section: Discussionmentioning

confidence: 98%

“…As first reported by Smolenskii et al [19], NBT is a pseudo-cubic perovskite oxide with a rhombohedral phase at room temperature [20], which exhibits two subsequent phase transitions (rhombohedral-tetragonal and tetragonal-cubic) with increasing temperature [21][22][23]. Different deposition techniques, such as sputtering [24,25], chemical sol-gel processes [26,27], and pulsed laser deposition (PLD) [28][29][30], have been used so far to realize NBT thin films. It was found in these studies that the target stoichiometry and the PLD deposition conditions have a strong influence on the NBT growth and the final properties [21,28,31].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electric Properties of Epitaxial Na0.5Bi0.5TiO3-Based Thin Films

et al. 2021

View full text Add to dashboard Cite

Substantial efforts are dedicated worldwide to use lead-free materials for environmentally friendly processes in electrocaloric cooling. Whereas investigations on bulk materials showed that Na0.5Bi0.5TiO3 (NBT)-based compounds might be suitable for such applications, our aim is to clarify the feasibility of epitaxial NBT-based thin films for more detailed investigations on the correlation between the composition, microstructure, and functional properties. Therefore, NBT-based thin films were grown by pulsed laser deposition on different single crystalline substrates using a thin epitaxial La0.5Sr0.5CoO3 layer as the bottom electrode for subsequent electric measurements. Structural characterization revealed an undisturbed epitaxial growth of NBT on lattice-matching substrates with a columnar microstructure, but high roughness and increasing grain size with larger film thickness. Dielectric measurements indicate a shift of the phase transition to lower temperatures compared to bulk samples as well as a reduced permittivity and increased losses at higher temperatures. Whereas polarization loops taken at −100 °C revealed a distinct ferroelectric behavior, room temperature data showed a significant resistive contribution in these measurements. Leakage current studies confirmed a non-negligible conductivity between the electrodes, thus preventing an indirect characterization of the electrocaloric properties of these films.

show abstract

“…The preparation of materials with multiple specific orientations, such as 〈110〉 or 〈111〉, is difficult to achieve in ceramic materials due to the limitations of the template grains, but is more easily achieved in thin film materials. [ 28–31 ]…”

Section: Introductionmentioning

confidence: 99%

Polarization Rotation Control Domain Dynamic Response Modulates Piezoelectric Properties of Lead‐Free Thin Films

Zhu

Lin

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

Domain orientation engineering regulates the polarization direction of thin film and facilitates the enhancement of piezoelectric properties. A change in polarization direction implies a structural change in the piezoelectric thin film. In this work, some unexpected results are obtained by preparing three orientations of Bi0.5Na0.5TiO3‐based lead‐free piezoelectric thin films to amplify this structural change. In distinction to the conventional perception, the piezoelectric properties decrease with increasing polarization direction. This anomaly is influenced by the concentration of structural defects, and rotation of the polarization direction may induce a change in the electronic structure of the material and hence in the concentration of structural defects. Ultimately, the suppression of the domain dynamics response by increasing structural defects leads to the worst piezoelectric properties for thin films with the traditionally perceived optimal (100) orientation. The revelation of this anomaly has implications for the design of the next generation of high‐performance piezoelectric thin films.

show abstract

Ferroelectric properties of manganese doped (Bi1/2Na1/2)TiO3 and (Bi1/2Na1/2)TiO3–BaTiO3 epitaxial thin films

Cited by 33 publications

References 31 publications

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Structural and Electric Properties of Epitaxial Na0.5Bi0.5TiO3-Based Thin Films

Polarization Rotation Control Domain Dynamic Response Modulates Piezoelectric Properties of Lead‐Free Thin Films

Contact Info

Product

Resources

About

Ferroelectric properties of manganese doped (Bi1/2Na1/2)TiO3 and (Bi1/2Na1/2)TiO3–BaTiO3 epitaxial thin films

Cited by 33 publications

References 31 publications

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Structural and Electric Properties of Epitaxial Na0.5Bi0.5TiO3-Based Thin Films

Polarization Rotation Control Domain Dynamic Response Modulates Piezoelectric Properties of Lead‐Free Thin Films

Contact Info

Product

Resources

About

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm