Ferroelectric Properties of Pb(Zi, Ti)O₃ Capacitor with Thin SrRuO₃ Films within Both Electrodes

Abstract

A minimal model, consisting of a 4 × 4 Hamiltonian and pertaining to a single Mn-O-Mn bond in the manganites, is introduced and solved to elucidate the physics of the dynamical Jahn-Teller effect on the double-exchange (DEX) interaction. The effect originates from the coupling of the motion of the bridging oxygen atom to the Mn electrons. It is shown that (i) the DEX interaction is considerably reduced by the dynamical Jahn-Teller effect and (ii) this reduction depends on the oxygen mass leading to an isotope shift in the Curie temperature, T c ∝ M α , with α ∼ 0.2. The isotope shift is found to depend sharply on the electron hopping parameter t. The exact results are also compared to the results obtained from both the adiabatic and the diabatic approximations.

Microstructure and Electrical Conductivity of SrRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

“…1) Since SRO has a pseudo-cubic perovskite structure similar to ferroelectric PbZr x Ti 1Àx O 3 (PZT) and BaSr x Ti 1Àx O 3 (BST) materials, SRO thin film would provide good bottom electrodes for ferroelectric devices with a layered structure, where well-coherent or epitaxial film with a flat surface texture is required. [2][3][4] SRO thin films have been prepared by sputtering, 3,[5][6][7] metal-organic chemical vapor deposition (MOCVD) 7,8) and laser ablation (pulsed laser deposition). [9][10][11][12] It is known that sputtering often causes a significant difference of composition between targets and films and that MOCVD requires subtle control of the composition due to the difference of chemical stability between alkaline-earth and noble metal precursors.…”

Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition

“…La(NO 3 ) 3 and Ni(CH 3 COO) 2 were used as raw materials for the LNO precursor and 2-methoxyethanol and 2-aminoethanol mixed solution or ethanol was used as a solvent. Details for precursor preparation are described elsewhere.…”

Ferroelectric properties of highly a-oriented polycrystalline Bi2WO6 thin films grown on glass substrates

“…[8][9][10] The ferroelectric fatigue phenomenon can be overcome by using optimum electrodes such as IrO 2 and SrRuO 3 . 11,12 To avoid the toxicity of lead in PZT thin films, many researchers have developed lead-free ferroelectric thin films such as BiFeO 3 and SrBi 2 Ta 2 O 9 . 13,14 In particular, layered perovskite thin films, such as SrBi 2 Ta 2 O 9 and Bi 2 WO 6 (BWO), are well-known, fatigue-free ferroelectric thin films (although they do have lower ferroelectric polarizations than PZT thin films).…”