2010
DOI: 10.1063/1.3437090
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Ferroelectric Q-phase in a NaNbO3 epitaxial thin film

Abstract: Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z=4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z=8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (… Show more

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Cited by 37 publications
(25 citation statements)
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“…The difference [ δn T  =  n ( T ) −  n 0 ( T 0 )] is found to be negative for temperatures below T 0 in all films (figure 4(b)), confirming the low-temperature ferroelectric state in the NaNbO 3 films. The observation of ferroelectric behaviour is consistent with the previous theoretical and experimental studies of epitaxial NaNbO 3 films [9, 16, 17, 18]. …”
Section: Resultssupporting
confidence: 91%
“…The difference [ δn T  =  n ( T ) −  n 0 ( T 0 )] is found to be negative for temperatures below T 0 in all films (figure 4(b)), confirming the low-temperature ferroelectric state in the NaNbO 3 films. The observation of ferroelectric behaviour is consistent with the previous theoretical and experimental studies of epitaxial NaNbO 3 films [9, 16, 17, 18]. …”
Section: Resultssupporting
confidence: 91%
“…[33][34][35] Crystallographically, the unit cells of P and Q phases are quadrupled and doubled, respectively, in [010] direction of the prototype cubic perovskite unit cell. 18 Subsequently, superlattice diffractions with 1 = 4 {010}-type, for P phase, and 1 = 2 {010}-type, for Q phase, are manifested in the electron diffraction patterns.…”
Section: Resultsmentioning
confidence: 99%
“…NaNbO 3 based materials have attracted much interest from scientific as well as potentially practical point of view due to their promising ferro-and piezoelectric properties, 25 transitions and interesting electric behavior under the influence of applied electric field or lattice strain. [26][27][28][29][30] However, NaNbO 3 undergoes a phase transition from a para-to an antiferroelectric phase at 633 K and crystallizes at RT in the orthorhombic P phase 28 (space group Pbcm) in contrast to the above mentioned materials.…”
mentioning
confidence: 93%