2008
DOI: 10.1080/00150190802384500
|View full text |Cite
|
Sign up to set email alerts
|

Ferroelectric Thin-Film Devices

Abstract: Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2009
2009
2018
2018

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 18 publications
0
2
0
Order By: Relevance
“…Transition metal oxides with a cubic perovskite structure ATiO 3 (A = Ba, Sr, Ca) have been of great interest in science and engineering in the electronics industry and are noteworthy for their advantageous dielectric, ferroelectric, piezoelectric, thermoelectric, superconducting, electrostrictive, and electro-optic properties with corresponding applications. Among these materials, strontium titanate (SrTiO 3 ), as an ideal substrate material for epitaxial growth of many functional materials and with its own high dielectric constant, thermal stability, and photocatalytic properties, serves as one of the most versatile functional materials in a wide range of technological uses. Generally, SrTiO 3 is prepared by solid-state reaction , of strontium carbonate and titanium dioxide, typically at temperatures higher than 900 °C. SrTiO 3 powders obtained from this traditional method are generally microstructural variations due to the lack of control over the physical and chemical characteristics, which always leads to poor property optimization and reproducibility.…”
Section: Introductionmentioning
confidence: 99%
“…Transition metal oxides with a cubic perovskite structure ATiO 3 (A = Ba, Sr, Ca) have been of great interest in science and engineering in the electronics industry and are noteworthy for their advantageous dielectric, ferroelectric, piezoelectric, thermoelectric, superconducting, electrostrictive, and electro-optic properties with corresponding applications. Among these materials, strontium titanate (SrTiO 3 ), as an ideal substrate material for epitaxial growth of many functional materials and with its own high dielectric constant, thermal stability, and photocatalytic properties, serves as one of the most versatile functional materials in a wide range of technological uses. Generally, SrTiO 3 is prepared by solid-state reaction , of strontium carbonate and titanium dioxide, typically at temperatures higher than 900 °C. SrTiO 3 powders obtained from this traditional method are generally microstructural variations due to the lack of control over the physical and chemical characteristics, which always leads to poor property optimization and reproducibility.…”
Section: Introductionmentioning
confidence: 99%
“…Ferroelectric nanostructures have recently attracted attention owing to both fundamental scientific interest, as well as the possibility of well‐regulated energy and information storage 1. The potential applications for these new materials include sensors, actuators, compact electronics, pyrosensors and thermal imaging devices 2–6. Lead zirconate titanate (PZT) systems have been studied extensively because of their outstanding ferroelectric, piezoelectric and pyroelectric properties coupled with their thermal stability and relative ease of synthesis 4, 7–9.…”
Section: Introductionmentioning
confidence: 99%