Ferroelectric thin film fabrication by direct UV-lithography

Benkler, Manuel; Paul, F.; Schott, Jennifer A.; Hanemann, Thomas

doi:10.1007/s00542-013-1963-0

Cited by 5 publications

(1 citation statement)

References 34 publications

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“…In another flask, titanium iso-propoxide and zirconium n-propoxide were mixed and stirred in 150 mL of 2-MOE for 30 min. This solution mixture was gradually added to the lead powder and refluxed for 2 h under Ar at 120 • C. The final solution mixture was distilled under vacuum and diluted with 22.5 vol% of acetylacetone and 5 vol% of 2-MOE to obtain 0.4 M. The PZT solution is expected to have a viscosity of 2-5 cP [46,47].…”

Section: Experimental Procedures 21 Solution Preparationmentioning

confidence: 99%

Tuning Nb Solubility, Electrical Properties, and Imprint through PbO Stoichiometry in PZT Films

Akkopru-Akgun

Trolier-McKinstry

2023

Materials

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Lead zirconate titanate (PZT) films with high Nb concentrations (6–13 mol%) were grown by chemical solution deposition. In concentrations up to 8 mol% Nb, the films self-compensate the stoichiometry; single phase films were grown from precursor solutions with 10 mol% PbO excess. Higher Nb concentrations induced multi-phase films unless the amount of excess PbO in the precursor solution was reduced. Phase pure perovskite films were grown with 13 mol% excess Nb with the addition of 6 mol% PbO. Charge compensation was achieved by creating lead vacancies when decreasing excess PbO level; using Kroger-Vink notation, NbTi• are ionically compensated by VPb″ to maintain charge neutrality in heavily Nb-doped PZT films. With Nb doping, films showed suppressed {100} orientation, the Curie temperature decreased, and the maximum in the relative permittivity at the phase transition broadened. The dielectric and piezoelectric properties were dramatically degraded due to increased quantity of the non-polar pyrochlore phase in multi-phase films; εr reduced from 1360 ± 8 to 940 ± 6, and the remanent d33,f value decreased from 112 to 42 pm/V when increasing the Nb concentration from 6 to 13 mol%. Property deterioration was corrected by decreasing the PbO level to 6 mol%; phase pure perovskite films were attained. εr and the remanent d33,f increased to 1330 ± 9 and 106 ± 4 pm/V, respectively. There was no discernable difference in the level of self-imprint in phase pure PZT films with Nb doping. However, the magnitude of the internal field after thermal poling at 150 °C increased significantly; the level of imprint was 30 kV/cm and 11.5 kV/cm in phase pure 6 mol% and 13 mol% Nb-doped films, respectively. The absence of mobile VO••, coupled with the immobile VPb″ in 13 mol% Nb-doped PZT films, leads to lower internal field formation upon thermal poling. For 6 mol% Nb-doped PZT films, the internal field formation was primarily governed by (1) the alignment of (VPb″−VO•• )x and (2) the injection and subsequent electron trapping by Ti4+. For 13 mol% Nb-doped PZT films, hole migration between VPb″ controlled internal field formation upon thermal poling.

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Section: Experimental Procedures 21 Solution Preparationmentioning

confidence: 99%

Tuning Nb Solubility, Electrical Properties, and Imprint through PbO Stoichiometry in PZT Films

Akkopru-Akgun

Trolier-McKinstry

2023

Materials

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Polymer‐based route to ferroelectric lead strontium titanate thin films

Benkler

Hobmaier

Gleißner

et al. 2014

J of Applied Polymer Sci

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Ceramic films with high values of ferroelectricity, piezoelectricity, and dielectricity with perovskite structure, like lead zirconate titanate (PZT, PbZrxTi1‐xO3), lead strontium titanate (PST, PbxSr1‐xTiO3), and barium strontium titanate (BST, BaxSr1−xTiO3), are subjects of intensive research due to their use in sensors, energy harvesters, capacitors, and FeRAMs. Here a novel, simple way to produce micropatterned perovskite PST thin films on silicon substrates by a polymer‐based direct UV‐lithography process is presented. By acrylic acid modification of PST precursor sols it is possible to generate photosensitive metal organic PST precursor xerogel films by spin‐coating and subsequently drying on silicon wafers. These films can be patterned by UV‐lithography and developed with organic solvents. The resulting patterned gel films can be crystallized in air via rapid thermal annealing. The obtained perovskite thin ceramic films are polycrystalline and fine grained. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40901.

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