Ferroelectric Thin Films and Thin Film Devices

Scott, J. F.; Araújo, Carlos A. Paz de; McMillan, L. D.

doi:10.1007/978-3-0348-7551-6_7

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“…In recent years, there has been an increasing interest in technical usage of ferroelectric thin films in electronic devices [1] such as memories, sensors and superconducting field-effect transistors. Many methods have been employed for the growth of ferroelectric thin films of Pb(Zr, Ti)O 3 (PZT) such as sputtering [2], sol-gel spin-on [3], pulsed laser ablation [4] and chemical vapour deposition [5].…”

Section: Introductionmentioning

confidence: 99%

The microstructure of and films

Cao

Guo

et al. 1996

Supercond. Sci. Technol.

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Pb(Zr 0.53 Ti 0.47 )O 3 (PZT 53/47) is a polycrystalline film with coarse square-shaped grains. The surface morphology can be improved by reducing the cooling rate at the Curie temperature region; however this morphology still does not meet the requirement of device engineering. Pb(Zr 0.2 Ti 0.8 )O 3 (PZT 20/80) film has been synthesized, to reduce the lattice mismatch between PZT and substrate. This film has a smooth surface without any evident crystalline features. A TEM of the cross-sectional PZT/YBa 2 Cu 3 O 7 (YBCO) integrated film shows there is no interaction between the PZT, YBCO and substrate. ZrO 2 particles are detected in the PZT film.

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