Ferroelectric thin films for micro-sensors and actuators: a review

Muralt, Paul

doi:10.1088/0960-1317/10/2/307

Cited by 856 publications

(444 citation statements)

References 93 publications

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“…Ferroelectric materials are considered as one of the most promising candidate materials in a variety of electric and mechatronic devices, such as modern memory, [1][2][3] sensor, 4,5 capacitors, 6 and electrocaloric devices, 7,8 due to their excellent physical properties, including piezoelectricity, dielectric permittivity and pyroelectricity. [9][10][11][12][13] As the development of modern processes for thin film growth and characterization, new modalities of strain control of ferroelectric materials that go beyond traditional lattice mismatch effects can be achieved.…”

Section: Introductionmentioning

confidence: 99%

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Zhang

et al. 2016

AIP Advances

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The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110)-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

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Section: Introductionmentioning

confidence: 99%

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Zhang

et al. 2016

AIP Advances

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“…With the trend towards miniaturization and integration, low-dimensional ferroelectrics especially ferroelectric films play a crucial role in the device applications of micro/nano-electronics and electromechanics, such as nonvolatile ferroelectric memories, 1,2 micro-devices 3,4 and microwave devices. 5 However, as reduced to low dimension, the properties of ferroelectrics deviate from their bulk counterparts.…”

Section: Introductionmentioning

confidence: 99%

Domain structures of ferroelectric films under different electrical boundary conditions

Zhou

2015

AIP Advances

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A two-dimensional phase field simulation of ferroelectric films is used that incorporates Landau-Devonshire energy, gradient energy and depolarization electrical energy. A new intermediate electrical boundary condition is firstly presented to study the effects on domain structures of ferroelectric films. Two-dimensional simulations of domain structures are carried out under the open circuit (OC), short circuit (SC) and intermediate (IM) electrical boundary conditions. The simulation results show that there are multi-vortices domains and 180° multi-stripes domains under OC and SC electrical boundary condition, respectively. And there is a transition from multi-vortices domains to 180° multi-stripes domains under the IM electrical boundary condition due to competition between the elastic energy and depolarization electrical energy in the films. The present IM electrical boundary condition can completely characterize different degrees of compensation for surface charges by the electrodes and further describe the effect on the depolarization electrical energy. It can also be reduced to OC and SC electrical boundary conditions. Hence, for nano-thin ferroelectric films, the IM electrical boundary condition plays an important role in the formation of domain structures.

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“…Ferroelectric thin films offer a variety of possible applications, [1][2][3][4] including capacitors, pyroelectric sensors, FeRAMs and valves for ink, fuel or medicines. In order to integrate ferroelectrics into suitable devices miniaturization is frequently necessary.…”

Section: Introductionmentioning

confidence: 99%

Impact of misfit relaxation and a-domain formation on the electrical properties of tetragonal PbZr0.4Ti0.6O3/PbZr0.2Ti0.8O3 thin film heterostructures: Experiment and theoretical approach

Feigl

Misirlioglu

Vrejoiu

et al. 2009

Journal of Applied Physics

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Heterostructures consisting of PbZr 0.2 Ti 0.8 O 3 and PbZr 0.4 Ti 0.6 O 3 films grown on a SrTiO 3 (100) substrate with a SrRuO 3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the dislocation content and domain patterns were varied. The resulting microstructure was investigated by transmission electron microscopy. Macroscopic ferroelectric measurements have shown a large impact of the formation of dislocations and 90° domains on the ferroelectric polarization and dielectric constant. A thermodynamic analysis using the LANDAU-GINZBURG-DEVONSHIRE approach that takes into account the ratio of the thicknesses of the two ferroelectric layers and electrostatic coupling is used to describe the experimental data.

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Ferroelectric thin films for micro-sensors and actuators: a review

Cited by 856 publications

References 93 publications

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Domain structures of ferroelectric films under different electrical boundary conditions

Impact of misfit relaxation and a-domain formation on the electrical properties of tetragonal PbZr0.4Ti0.6O3/PbZr0.2Ti0.8O3 thin film heterostructures: Experiment and theoretical approach

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