After calculations of various domain‐switching current transients under the pulse from electrical circuit parameters, the field dependence of domain‐switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain‐switching current in Pb(Zr0.4Ti0.6)O3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain‐switching current density of 1.4 × 108 A cm−1 is extracted at the highest field of 0.20 MV cm−1. From classical domain‐nucleation models with thermal fluctuations, an ultimate (asymptotic high‐field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink‐nucleation‐rate limited.