Ferroelectricity inBi4Ti3

E. C. Subbarao

¹

Microstructure and electrical properties of Aurivillius phase (CaBi2Nb2O9)1−x(BaBi2Nb2O9)x solid solution

“…While the octahedralcoordinated B site can be occupied by tetravalent, pentavalent, or hexavalent metallic cations. The number of octahedra along the c-axis between two neighboring ͑Bi 2 O 2 ͒ 2+ layers is indicated by m. 2 Aurivillius phase materials have generated increasing attention due to their potential use in nonvolatile ferroelectric random-access memory 3,4 and high-temperature piezoelectric applications 5 because of their fatigue-free properties and high Curie point, respectively. Some Aurivillius phase compounds show interesting relaxor and multiferroic properties when Ba/lanthanides 6,7 and Fe ͑Ref.…”

Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

“…[1][2][3] Following this trend, many lanthanide elements besides La, such as Nd, Sm, and Pr, were tried. [4][5][6][7][8] Due to the size differences between Bi and the dopant ions, further structural distortion within the perovskite block will take place, and thus the remanent polarization is enhanced.…”

B-site Multi-element Doping Effect on Electrical Property of Bismuth Titanate Ceramics

“…Doped BIT is of interest in high-temperature piezoelectric sensors, because it remains ferroelectric at T > 600 °C and offers relatively high piezoelectric property (Kumar, 2001;Nagata, 1999;Noguchi, Sugibuchi, 1975;Shimakawa, 2000;Subbarao, 1961;2000;Shulman, 2000;Shimazu, 1980 2x Nb x Ta x O 12 powders calcined at 800 °C for 4 h were prepared and their crystal structures were analyzed using XRD. Fig.…”