Ferroelectricity of low thermal-budget HfAlO<sub>x</sub> for devices with metal–ferroelectric–insulator–semiconductor structure

Chen, Kuen-Yi; Chu, K.R.; Chen, Pin-Hsuan; Wu, Yongfu

doi:10.1039/c6ra09987d

Cited by 25 publications

(17 citation statements)

References 35 publications

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“…Figure f shows a scanning transmission electron microscopy (STEM) image and the energy dispersive spectroscopy (EDS) elemental mapping of the cross section of the stacked dielectrics, revealing the spatial distributions of Hf, O, and Al. There are islands of coexisting Hf, Al, and O regions in the middle layer, which we assume to be the origin of the ferroelectric effects. − These three layers each have their functions. The bottom HfO 2 layer provides a high-κ gate dielectric to ensure good gate control efficiency, which blocks the charge carriers in the channel, keeping them away from the ferroelectric layer to reduce interface scattering .…”

Section: Resultsmentioning

confidence: 99%

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Xia

et al. 2022

ACS Appl. Mater. Interfaces

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Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 °C to grow ferroelectric dielectrics in which the single-pulse, paired-pulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000×, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.

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Section: Resultsmentioning

confidence: 99%

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Xia

et al. 2022

ACS Appl. Mater. Interfaces

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“…It is known that, if of ferroelectric origin, the orientation should be clockwise if the ferroelectric is on p‐type semiconductor and counterclockwise if it is deposited on n‐type semiconductor. [ 11,12 ] Therefore, in Figure are shown the recorded C – V characteristics at temperatures where the shape is MFS like for both HZO deposited on p‐Ge and n‐Ge, with the arrows indicating the orientation of the C – V hysteresis.…”

Section: Resultsmentioning

confidence: 99%

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf_0.5Zr_0.5O₂ Ferroelectric

Boni

Istrate

Zacharaki

et al. 2021

Physica Status Solidi (a)

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The discovery of ferroelectricity in doped HfO2 represents an excellent opportunity to overcome the obstacles in manufacturing reliable ferroelectric field effect transistors (FeFET) for nonvolatile memory applications, considering that HfO2 is compatible with Si and Ge and it is already used in semiconductor industry. The presence of interface defects may have detrimental effects on the operation of FeFETs, so their role is systematically investigated in this study in correlation with the substrate doping. Metal–ferroelectric–semiconductor (MFS) structures are fabricated by depositing Hf0.5Zr0.5O2 (HZO) layers on n‐type Ge substrate. Their electric properties are compared with those of MFS structures obtained by depositing HZO on p‐type Ge, to study the influence of the doping. It is found that, although the ferroelectric properties of HZO are similar, the capacitance and impedance of the MFS structures behave differently. For n‐Ge, the occupation probability of a large number of low‐lying interface defect acceptor states, charges the interface negatively which adversely affects the C–V response of the MFS, albeit without harming the ferroelectric (P–V) hysteresis. Although the interface defects do not harm ferroelectricity, they could inhibit inversion in p‐type Ge or accumulation in n‐type Ge so they should be taken into account when designing Ge FeFET devices.

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“…28,29 It has been previously shown that increasing the post-metal annealing temperature significantly enhanced the P r . [30][31][32][33][34][35][36] The intensity of ferroelectricity depends on the quantity and quality of domains in the orthorhombic phase (o-phase), which can be enhanced by increasing the rapid thermal annealing (RTA) temperature or the annealing time. As-deposited HfO x -based materials are polycrystalline and possess various ratios of monoclinic (space group: P2 1 /s), tetragonal (P4 2 /nmc), and orthorhombic (Pca 1 ) phase grains.…”

Section: Introductionmentioning

confidence: 99%

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO_x tunnel junction memory

Kim

Kwon

Lim

et al. 2023

Phys. Chem. Chem. Phys.

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Ferroelectricity of low thermal-budget HfAlO_x for devices with metal–ferroelectric–insulator–semiconductor structure

Abstract: The effect of annealing temperature on the ferroelectricity of HfAlOx with Al concentration of 4.5% is physically and electrically investigated by metal–ferroelectric–insulator–semiconductor (MFIS) platform.

Cited by 25 publications

References 35 publications

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf_0.5Zr_0.5O₂ Ferroelectric

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO_x tunnel junction memory

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Ferroelectricity of low thermal-budget HfAlOx for devices with metal–ferroelectric–insulator–semiconductor structure

Abstract: The effect of annealing temperature on the ferroelectricity of HfAlOx with Al concentration of 4.5% is physically and electrically investigated by metal–ferroelectric–insulator–semiconductor (MFIS) platform.

Cited by 25 publications

References 35 publications

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory

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Ferroelectricity of low thermal-budget HfAlO_x for devices with metal–ferroelectric–insulator–semiconductor structure

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf_0.5Zr_0.5O₂ Ferroelectric

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO_x tunnel junction memory