Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because of their unexpected ferroelectric behavior at the nanoscale, which enables the downscaling of ferroelectric devices. The present work reports an unprecedented ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown directly on (111)-Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal (111)-oriented ZrO2 films under epitaxial compressive strain exhibiting switchable ferroelectric polarization of about 20.2 μC/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time-dependent polarization reversal characteristics of Nb:SrTiO3/ZrO2/Au film capacitors exhibit typical bell-shaped curve features associated with the ferroelectric domain reversal and agree well with the nucleation limited switching (NLS) model. The polarization-electric field hysteresis loops point to an activation field comparable to the coercive field. Interestingly, the studied films show ferroelectric behavior per se, without the need to apply the wake-up cycle found in the orthorhombic phase of ZrO2. Overall, the rhombohedral ferroelectric ZrO2 films present technological advantages over the previously studied zirconia- and hafnia-based thin films and may be attractive for nanoscale ferroelectric devices.

The structure of BaLnCo2O6-δ (Ln =La, Pr, Nd, Sm, Gd, Tb and Dy) is was studied by the means of synchrotron radiation powder X-ray diffraction, neutron powder diffraction and Transmission Electron Microscopy (TEM), while water uptake properties were analysed with the use of thermogravimetry (TG) and water adsorption isotherms. The structure refinement revealed that the dominant phase in all compositions was orthorhombic with an ordering of the A-site cations along the c-axis and ordering of oxygen vacancies along the b-axis, which was also directly evidenced by TEM. It was shown that both unit cell volume and average Co-oxidation state at room temperature decrease linearly with decreasing Ln radius. TG water uptake experiments in humidified N2-O2 gas mixture at 300°C revealed that among all compositions, only BaLaCo2O6-δ and BaGdCo2O6-δ exhibit significant water uptake. Surface water adsorption studies showed that the α, a normalised parameter reflecting the surface hydrophilicity, mostly independently of Ln radius was close to 0.5, which means that the surface is neither hydrophobic nor hydrophilic. The results indicated that water uptake observed at 300 °C is a bulk process, which cannot be described by standard hydration/hydrogenation reaction and it is related to the layered structure of the perovskite lattice and characteristic to La or Gd being present in the lattice.

Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O2, and N2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.

Ferroelectric thin layer as an interface to enhance the photovoltaic characteristics of Si/SnOx heterojunctions for building efficient ferroelectric-based solar cells.

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1-xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of FeFET non-volatile memory devices. It is shown that, at low temperature (<160 K), a semiconductor depletion forms in Ge near the interface resulting in an increase of coercive voltage by about 2 V, accompanied by a distortion of the ferroelectric hysteresis with subloop asymmetric behavior, which becomes more severe at higher frequencies of measurement. At higher temperatures, the Ge surface near the ferroelectric is easily inverted due to low energy gap of Ge, providing sufficient screening of the polarization charge by minority free carriers, in which case, nearly ideal, symmetric hysteresis curves are recovered. The depolarization field is experimentally extracted from the coercive voltage and the capacitance measurements and is found to be ~ 2.2 MV/cm in the low temperature range, comparable to the coercive field, then rapidly decreasing at higher temperatures and effectively diminishing at room temperature. This makes Ge MFS good candidates for FeFETs for low voltage nonvolatile memory with improved reliability.