2014
DOI: 10.1103/physrevb.89.054424
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Ferromagnetic behavior of the Kondo lattice compoundNp2PtGa3

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Cited by 107 publications
(179 citation statements)
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References 42 publications
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“…[116] Soon after the pioneering work on 2D BP transistors in 2014, [30] the band structure of BP was theoretically examined with the thickness ranging from bulk to monolayer. [33,34] The theory shows that bulk BP is a direct-gap semiconductor with a gap size of ≈0.3 eV, which is consistent with previous experimental values. The conduction band minimum (CBM) and valence band maximum (VBM) are both located at the Z point of the 3D Brillouin zone, while for the mono and fewlayer cases, the CBM and VBM are both shifted to point Γ of the 2D Brillouin zone, and the bandgap increases with a decreasing thickness.…”
Section: Polarized Absorptionsupporting
confidence: 87%
See 1 more Smart Citation
“…[116] Soon after the pioneering work on 2D BP transistors in 2014, [30] the band structure of BP was theoretically examined with the thickness ranging from bulk to monolayer. [33,34] The theory shows that bulk BP is a direct-gap semiconductor with a gap size of ≈0.3 eV, which is consistent with previous experimental values. The conduction band minimum (CBM) and valence band maximum (VBM) are both located at the Z point of the 3D Brillouin zone, while for the mono and fewlayer cases, the CBM and VBM are both shifted to point Γ of the 2D Brillouin zone, and the bandgap increases with a decreasing thickness.…”
Section: Polarized Absorptionsupporting
confidence: 87%
“…[30] BP has a direct bandgap that exhibits a strong layer dependence, ranging from 0.3 eV (bulk) to 1.7 eV (monolayer). [31][32][33][34] It covers a broad frequency range from visible to mid-IR, filling up the gap between the most popular graphene and TMDCs. Moreover, the bandgap can be further tuned by strain [31,[35][36][37][38][39][40] and electric fields, [41][42][43][44] and even fully closed with a semiconductor-to-metal transition.…”
mentioning
confidence: 99%
“…[147] It is worth noting that BP has a direct bandgap that varies with the number of layers, and its regulation range is from 0.3 to 2 eV. [19,[148][149][150] Its tunable bandgap range makes up for the bandgap vacancy of the previous semiconductor in the range of 0-1 V and has a good application prospect in the field of infrared and infrared detection. In summary, 2D materials have excellent electron mobility, an adjustable bandgap range with layer number variation, a wide light absorption wavelength, and a good light absorption performance.…”
Section: Electronic and Optical Properties Of 2d Materialsmentioning
confidence: 99%
“…The 2D materials not only can be separated from the bulk materials but also can be stacked together as needed to form a new structure, which is called a vertical heterojunction, [150,[172][173][174][175][176] as shown in Figure 1a. This artificial structure greatly enriches the application of 2D materials and facilitates the manufacture of artificial materials with excellent properties that do not exist in nature.…”
Section: D Vertical P-n Junctionmentioning
confidence: 99%
“…[16] The variation of atomic number-of-layer from monolayer to bulk leads to a redshift of photon and phonon modes. [17,18] The photon energy and phonon frequency follows the relationships: [19][20][21][22][23] ω N ð Þ À ω 0 E G N ð Þ À E 0 ω T ð Þ À ω 0 ω P ð Þ À ω 0…”
Section: Introductionmentioning
confidence: 99%