Ferromagnetic Schottky Contact for GaN Based Spin Devices

Abstract

In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

Epitaxial Co on GaN by decomposition of template CoO

“…The relative SBH of the SF interface to the SF-free interface is consistent with the relative value using the MA methods. Compared to the previously reported SBH of the Co/n-GaN interface, 18 our calculation values of the Co/GaN interfaces with and without SFs are reasonably small. In addition, Fig.…”

“…[49][50][51] Schottky devices with low barrier heights, on the other hand, are commonly used in low-power applications, such as temperature sensors, thermocouples, and photovoltaic cells. Experimentally and theoretically, there have been a lot of research studies on GaN-based metal/semiconductor heterojunctions such as Fe/n-GaN (Si-doped GaN, n-type), 18 Co/n-GaN (Si-doped GaN, n-type), 18 Pb/GaN, 17 Pt/GaN, 17 Ag/GaN, 15 and Au/GaN. 15 Their SBHs are listed in the Table 1.…”

“…2,3 Due to its high electron mobility (B2.70 cm s À1 ), high thermal resistance, high radiation resistance, and good chemical stability, GaN has been widely used in optoelectronic devices, high-temperature highpower devices, and high-frequency microwave devices. [4][5][6][7][8][9][10][11][12][13] Heterojunctions between semiconductors and metals are frequently widely used in electron devices, 14 and there have been many studies on heterojunctions between GaN and transition metals (TMs) both experimentally and theoretically, such as Ag, 15 Au, 15 Pb, 16 Pt, 17 Pd, 17 Fe, 18 Co, [18][19][20] and Ni. 21 Importantly, the atomic structures and structural defects of the metal/ semiconductor interfaces would directly affect the physical, chemical, and electronic properties of the devices.…”

“…Heterojunctions between semiconductors and metals are frequently widely used in electron devices, 14 and there have been many studies on heterojunctions between GaN and transition metals (TMs) both experimentally and theoretically, such as Ag, 15 Au, 15 Pb, 16 Pt, 17 Pd, 17 Fe, 18 Co, 18–20 and Ni. 21 Importantly, the atomic structures and structural defects of the metal/semiconductor interfaces would directly affect the physical, chemical, and electronic properties of the devices.…”