Ferromagnetism and impurity band in a magnetic semiconductor: InMnP

Abstract

We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impurity band of the heavily doped ferromagnetic InMnP. Our results suggest that impurity band conduction is a characteristic of Mn-doped III-V semiconductors which have deep Mn-acceptor levels.

The UE46 PGM-1 beamline at BESSY II

“…• Charge order of high-Tc Superconductors (Blanco-Canosa et al, 2013;Comin et al, 2014;da Silva Neto et al, 2014;Fink et al, 2009;Ghiringhelli et al, 2012) • Coupling of electronic / lattice degrees of freedom in multiferroic materials (Glavic et al, 2013;Partzsch et al, 2011;Schierle et al, 2010;Schmitz-Antoniak et al, 2013;Skaugen et al, 2015) • Microcrystals of novel materials (Leininger et al, 2011;Matsuda et al, 2015) • Interfacial electronic properties in heterostructures (Frano et al, 2013;Wadati et al, 2009) • Element-speci c magnetic hysteresis loops (Radu et al, 2012) • Single molecular magnets (Bernien et al, 2015;Hermanns et al, 2013) • Electronic depth pro les • Electronic ground states and phase transitions in correlated materials (Schmitz et al, 2014;Strigari et al, 2013;Willers et al, 2012Willers et al, , 2011 • Magnetic clusters in carbon nanotubes (Shiozawa et al, 2015) • Nanoparticles for medical applications (Graf et al, 2015) • Magnetic semiconductors (Khalid et al, 2014) …”

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

“…The extreme representatives are (Ga,Mn)P and (In,Mn)P, in which the Mn energy levels are located 400 meV and 220 meV above the valence-band edge, respectively, compared to 110 meV for (Ga,Mn)As. Both materials exhibit hopping conduction [64,65].…”

A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

“…Indeed, the XMCD signal also shows a similar temperature dependent behavior as the magnetization measured by SQUID-VSM. 16 Both methods probe the same ferromagnetic phase. Therefore, we can prove that the ferromagnetism in InMnP is intrinsic and due to substituted Mn ions.…”

“…4,15 Recently, we have shown that ferromagnetic order can be induced in InMnP with a Mn concentration which is comparable to that of GaMnAs and GaMnP. 16 The aim is to study a system that has the Mn acceptor level in between GaMnAs and GaMnP compounds in order to shed light on the impurity versus valence band debate in III-V semiconductors. InMnP is the most favourable choice to study this effect as it has a bandgap of 1.34 eV and an isolated Mn energy level of 220 meV.…”