Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing

Yoon, Im Taek; Park, C.J.; Lee, Seung-Woong; Kang, Tae Won; Koh, Dongwan; Fu, Dejun

doi:10.1016/j.sse.2007.12.012

Cited by 14 publications

(9 citation statements)

References 29 publications

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“…Even with a 2% Mn flux during Ge growth, we still observe self-assembly of the quantum dot morphologies ubiquitous to the Ge/Si (001) system [12,13,14] as shown in FIG. 1: "hut cluster" islands ("H"), dome clusters ("D") and larger superdomes ("SD") [16].…”

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confidence: 97%

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Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures

et al. 2012

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Heteroepitaxial Ge 0.98 Mn 0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

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confidence: 97%

“…While many studies of Mn-doped epitaxial Ge films on Ge(001) have been performed, [6][7][8][9], much less has been done on magnetic doping of Group IV quantum dots (QDs) [10][11][12]. Heteroepitaxial QDs can spatially localize magnetic moments [13], and possibly increase T c due to hole confinement [14].…”

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confidence: 99%

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures

et al. 2012

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“…In particular, the sample with the highest doping concentration 10 17 cm −3 has the best ferromagnetic properties, with a maximum saturation magnetism M s of 2.2 × 10 −4 emu/g, and the largest coercive field strength H cmax of 295 Oe. The magnetism intensity M s is larger about one order quantity than that of Yoon et al reported Mn doped Ge QDs [14]. The steep rise and wide hysteresis loops at room temperature reveal that the Ge:Mn QD samples are intrinsic dilute magnetic semiconductors.…”

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confidence: 71%

The electromagnetic properties of the Mn doped Ge/Si quantum dots diodes

Lou

2013

Materials Science and Engineering: B

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“…Even so, phase separation resulting in nano-metal cluster formation can easily happen when samples are subject to elevated temperature processes. 9,12,13,[15][16][17] Once secondary phase clusters are formed in the Ge matrix, it is difficult to remove them by conventional post-annealing processes.…”

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confidence: 99%

“…All the IBIEC annealed GeMn samples showed highly crystallized structure without the formation of secondary phases. 9,13,16,23 We have also performed a cross-sectional TEM study of a sample before and after IBIEC treatment (see supplementary material for high resolution TEM pictures 34 ). Figure 2 shows the TEM picture of IBIEC annealed sample.…”

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confidence: 99%