2009
DOI: 10.1021/nl9020733
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Ferromagnetism in Semihydrogenated Graphene Sheet

Abstract: Single layer of graphite (graphene) was predicted and later experimentally confirmed to undergo metal-semiconductor transition when fully hydrogenated (graphane). Using density functional theory we show that when half of the hydrogen in this graphane sheet is removed, the resulting semihydrogenated graphene (which we refer to as graphone) becomes a ferromagnetic semiconductor with a small indirect gap. Half-hydrogenation breaks the delocalized pi bonding network of graphene, leaving the electrons in the unhydr… Show more

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Cited by 822 publications
(761 citation statements)
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“…In contrast, as predicted by Zhou et al [30], semihydrogenation (one completely covered carbon sublattice on one side) produces the ferromagnetic, indirect narrow-gap semiconductor graphone. Although the latter system has not yet been synthesized, the transition from graphene to graphone and graphane with increasing degree of hydrogenation shows that the amount of adatom coverage is decisive for the properties of the resulting graphene derivate.…”
Section: Introductionmentioning
confidence: 74%
“…In contrast, as predicted by Zhou et al [30], semihydrogenation (one completely covered carbon sublattice on one side) produces the ferromagnetic, indirect narrow-gap semiconductor graphone. Although the latter system has not yet been synthesized, the transition from graphene to graphone and graphane with increasing degree of hydrogenation shows that the amount of adatom coverage is decisive for the properties of the resulting graphene derivate.…”
Section: Introductionmentioning
confidence: 74%
“…Moreover, ferromagnetism in semihydrogenated graphene has been predicted theoretically. 27 Chemical functionalization can also change the indirect gap of the 2D polysilane to a direct gap 28 and the metallic silicon surface to a semiconductor in different cesium coverages. 29 Then, what is the case of 2D fewZnOLs?…”
Section: B Fluorinated Few-znolsmentioning
confidence: 99%
“…The ease with which graphene can be functionalized with hydrogen [3][4][5], oxygen [6][7][8], and metal atoms [9][10][11] has further added a new dimension into its potential for novel applications. Atomic layer deposition (ALD) is an efficient surface controlled thin film growth technique that is often used to deposit metal atoms on graphene [12].…”
Section: Introductionmentioning
confidence: 99%