Few electron limit of n-type metal oxide semiconductor single electron transistors

Prati, Enrico; Michielis, M. De; Belli, M.; Cocco, S.; Fanciulli, M.; Kotekar‐Patil, Dharmraj; Ruoff, Matthias; Kern, D. P.; Wharam, D.; Verduijn, J.; Tettamanzi, G. C.; Rogge, Sven; Roche, B.; Wacquez, R.; Jehl, X.; Vinet, M.; Sanquer, M.

doi:10.1088/0957-4484/23/21/215204

Cited by 52 publications

(47 citation statements)

References 19 publications

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“…The simulated device, presented in Fig.4, features realistic geometric sizes closer to the device (single and double quantum dots) proposed in Refs. [26,27]. The device considered is a silicon nanowire featuring a rectangular section with a fixed thickness T Si =15 nm and with a width W .…”

Section: Gate Design and Performancesmentioning

confidence: 99%

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Ferraro¹,

Michielis²,

Fanciulli

et al. 2014

Quantum Inf Process

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Double dot exhange only qubit represents a promising compromise between high speed and simple fabrication in solid state implementations. A couple of interacting double dot exhange only qubits, each composed by three electrons distributed in a double quantum dot, is exploited to realize Controlled-NOT (CNOT) operations. The effective Hamiltonian model of the composite system is expressed by only exchange interactions between pairs of spins. Consequently the evolution operator has a simple form and represents the starting point for the research of sequences of operations that realize CNOT gates. Two different geometrical configurations of the pair are considered and a numerical mixed simplex and genetic algorithm is used. We compare the non physical case in which all the interactions are controllable from the external and the realistic condition in which intra-dot interactions are fixed by the geometry of the system. In the latter case, we find the CNOT sequences for both the geometrical configurations and we considered a qubit system where electrons are electrostatically confined in two quantum dots in a silicon nanowire. The effects of the geometrical sizes of the nanowire and of the gates on the fundamental parameters controlling the qubit are studied by

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Section: Gate Design and Performancesmentioning

confidence: 99%

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Ferraro¹,

Michielis²,

Fanciulli

et al. 2014

Quantum Inf Process

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“…b) Electronic mail: e.charbon@tudelft.nl fabricated in a deep-submicron (DSM) CMOS process, due to its density, versatility, and full compatibility with standard CMOS circuits. DSM CMOS circuits have been known to operate at deep cryogenic temperatures, down to several hundreds of mK [16][17][18][19]21,22 . Cryogenic FPGAs can operate at 4K as a quantum controller 23,24 .…”

Section: Introductionmentioning

confidence: 99%

A reconfigurable cryogenic platform for the classical control of quantum processors

Homulle

Visser

Patra

et al. 2017

Review of Scientific Instruments

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The implementation of a classical control infrastructure for large-scale quantum computers is challenging due to the need for integration and processing time, which is constrained by coherence time. We propose a cryogenic reconfigurable platform as the heart of the control infrastructure implementing the digital error-correction control loop. The platform is implemented on a field-programmable gate array (FPGA) that supports the functionality required by several qubit technologies and that can operate close to the physical qubits over a temperature range from 4 K to 300 K. This work focuses on the extensive characterization of the electronic platform over this temperature range. All major FPGA building blocks (such as look-up tables (LUTs), carry chains (CARRY4), mixed-mode clock manager (MMCM), phase-locked loop (PLL), block random access memory, and IDELAY2 (programmable delay element)) operate correctly and the logic speed is very stable. The logic speed of LUTs and CARRY4 changes less then 5%, whereas the jitter of MMCM and PLL clock managers is reduced by 20%. The stability is finally demonstrated by operating an integrated 1.2 GSa/s analog-to-digital converter (ADC) with a relatively stable performance over temperature. The ADCs effective number of bits drops from 6 to 4.5 bits when operating at 15 K.

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“…[3] The study of the Anderson-Mott transition from delocalized to localized electrons in semiconductors triggered by the doping concentration is a metal-insulator transition (MIT) [4,5,6,7]. Such MIT has represented a hard problem to solve theoretically and experimentally, even in the case of the most simple and well known case of doped silicon such as Si:As and Si:P. [7] The possibilities opened by nanofabrication of semiconductor devices [8,9] consist in the control of the position of impurity atoms at nanometric precision by a one-by-one method of implantation called single ion implantation (SII). Taking advantage of this method [10,11,12], it has been possible to create chains of individually implanted ions in silicon [13,14], and to investigate the effects caused by their proximity and the residual disorder affecting their position and ground state energy distribution [15].…”

Section: Introductionmentioning

confidence: 99%

Towards room temperature solid state quantum devices at the edge of quantum chaos for long-living quantum states

Prati

2015

J. Phys.: Conf. Ser.

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Abstract. Long living coherent quantum states have been observed in biological systems up to room temperature. Light harvesting in chromophores is realized by excitonic systems living at the edge of quantum chaos, where energy level distribution becomes semi-Poissonian. On the other hand, artificial materials suffer the loss of coherence of quantum states in quantum information processing, but semiconductor materials are known to exhibit quantum chaotic conditions, so the exploitation of similar conditions are to be considered. The advancements of nanofabrication, together with the control of implantation of individual atoms at nanometric precision, may open the experimental study of such special regime at the edge of the phase transitions for the electronic systems obtained by implanting impurity atoms in a silicon transistor. Here I review the recent advancements made in the field of theoretical description of the light harvesting in biological system in its connection with phase transitions at the few atoms scale and how it would be possible to achieve transition point to quantum chaotic regime. Such mechanism may thus preserve quantum coherent states at room temperature in solid state devices, to be exploited for quantum information processing as well as dissipation-free quantum electronics.

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Few electron limit of n-type metal oxide semiconductor single electron transistors

Cited by 52 publications

References 19 publications

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

A reconfigurable cryogenic platform for the classical control of quantum processors

Towards room temperature solid state quantum devices at the edge of quantum chaos for long-living quantum states

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