Fiber grating coupler development for Si-photonics process design kits at CEA-LETI

Fowler, Daivid; Grosse, Philippe; Gays, Fabien; Szelag, Bertrand; Baudot, Charles; Vuillet, Nathalie; Planchot, Jonathon; Bœuf, F.

doi:10.1117/12.2511845

Cited by 12 publications

(5 citation statements)

References 18 publications

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“…With a polarization-insensitive design both polarizations of the optical signal could be coupled into the chip and processed. Coverage of the C-band by grating couplers has been demonstrated [41], [42]. These shortcomings could be explored in future designs.…”

Section: Polarization Diversitymentioning

confidence: 99%

Heterogeneous Optical Access Networks: Enabling Low-Latency 5G Services With a Silicon Photonic Smart Edge

Guan

Dubé-Demers

Shi

et al. 2021

J. Lightwave Technol.

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In the 5G era, optical fronthaul is a major challenge in meeting growing demand. Edge computation and coordinated multipoint for 5G have stringent requirements for high throughput and low latency, either in single-wavelength or wavelength-division-multiplexing fronthaul. We propose a new silicon photonic solution to deliver 5G services on existing optical access networks with colorless optical network units, such as passive optical networks. The newly added 5G services form a heterogeneous optical access network. Using the existing fiber infrastructure, broadband services coexist with new 5G signals that can densify 5G coverage. The proposed scheme is both wavelength-selective (in the distribution network) and colorless (at the end user site). We use silicon microring modulators to create subcarriers slaved from the broadband service distributed carrier; additional microring modulators generate 5G signals exploiting those subcarriers. We experimentally validated the successful coexistence of 5G signals (various formats) with a broadband signal (various formats).

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Section: Polarization Diversitymentioning

confidence: 99%

Heterogeneous Optical Access Networks: Enabling Low-Latency 5G Services With a Silicon Photonic Smart Edge

Guan

Dubé-Demers

Shi

et al. 2021

J. Lightwave Technol.

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“…To evaluate the output optical power of the widely tunable laser uniquely, P-I measurements were performed on equivalent tunable lasers decoupled from the SOA booster. In this case, however, reflectionless vertical grating couplers were designed at the laser output to allow for on-chip characterization [38]. A cleaved fiber with an angle of 11.5 • is used.…”

Section: Resultsmentioning

confidence: 99%

Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

et al. 2021

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

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“…The etched lateral gaps increase gradually from 28 nm to 163 nm. Although the calculated gap widths are limited by the SWG apodization profile [68,69], the utilization of everimproving lithographic techniques with sub-50 nm feature size resolution, such as e-beam or immersion lithography [70], shows potential for faithful fabrication of many SWGengineered devices in the future [64]. To keep a constant radiation angle, hence the linear phase profile of the out-radiated field, the grating period is chirped in a range from 590 nm to 691 nm over the full coupler length.…”

Section: Apodized Grating Couplermentioning

confidence: 99%

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics

Fraser,

Korček,

Glesk

et al. 2024

Nanomaterials

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Silicon nitride (Si3N4) is an ideal candidate for the development of low-loss photonic integrated circuits. However, efficient light coupling between standard optical fibers and Si3N4 chips remains a significant challenge. For vertical grating couplers, the lower index contrast yields a weak grating strength, which translates to long diffractive structures, limiting the coupling performance. In response to the rise of hybrid photonic platforms, the adoption of multi-layer grating arrangements has emerged as a promising strategy to enhance the performance of Si3N4 couplers. In this work, we present the design of high-efficiency surface grating couplers for the Si3N4 platform with an amorphous silicon (α-Si) overlay. The surface grating, fully formed in an α-Si waveguide layer, utilizes subwavelength grating (SWG)-engineered metamaterials, enabling simple realization through single-step patterning. This not only provides an extra degree of freedom for controlling the fiber–chip coupling but also facilitates portability to existing foundry fabrication processes. Using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations, a metamaterial-engineered grating coupler is designed with a coupling efficiency of −1.7 dB at an operating wavelength of 1.31 µm, with a 1 dB bandwidth of 31 nm. Our proposed design presents a novel approach to developing high-efficiency fiber–chip interfaces for the silicon nitride integration platform for a wide range of applications, including datacom and quantum photonics.

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Fiber grating coupler development for Si-photonics process design kits at CEA-LETI

Cited by 12 publications

References 18 publications

Heterogeneous Optical Access Networks: Enabling Low-Latency 5G Services With a Silicon Photonic Smart Edge

Heterogeneous Optical Access Networks: Enabling Low-Latency 5G Services With a Silicon Photonic Smart Edge

Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics

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