Fibrous Al-Doped ZnO Thin Film Ultraviolet Photodetectors With Improved Responsivity and Speed

Kumar, Chandan; Kushwaha, Bhoopendra Kumar; Kumar, Amit; Jarwal, Deepak Kumar; Upadhyay, Rishibrind Kumar; Singh, Abhinav Pratap; Jit, Satyabrata

doi:10.1109/lpt.2020.2974780

Cited by 48 publications

(7 citation statements)

References 31 publications

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“…The generation of hot carriers not only improved the detection of green light (515 nm, ≈5 × 10 −3 A W −1 ) but also extended the detection range to red (630 nm, ≈5 × 10 −4 A W −1 ), and even to the NIR (780 nm, 10 4 A W −1 ). The 808 nm laser-annealed Au NPs/IZO PD offered good reliability and stability, performing with dynamic detection and keeping its operating lifetime for more than 22 d. Even though the high potential for use in solutions based on this technique has been performed, other kinds of MO functional nanostructure (ZnO:Cd-La, and TiO 2 :Ni) [59,60] or thin film (TiO 2 :Fe, ZnO:Al, and ZnO:Li) [61][62][63] composed from sol-gel network are still worth to be tested for optimizing the photoresponsivity or response speed. Furthermore, from our work, the initial trials of fabricating Au NPs/IZO PD on 3D printable polymer substrates for UV (365 nm) detection were accomplished under a low power 808 nm laser-annealing process.…”

Section: Discussionmentioning

confidence: 99%

Exploiting Thermoplasmonic Effects for Laser‐Assisted Preparation of Au Nanoparticles/InZnO Thin Film with Visible Range Photodetection Properties

Lin

Khitous

Zan

et al. 2021

Advanced Optical Materials

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To achieve such excellent electrical properties, thin-film deposition by a high-vacuum system, such as sputtering, have been widely used. [9][10][11] Such processes usually require high cost for device fabrication. In contrast, the use of solution-based materials, especially for metal precursors used in sol-gel chemistry, has attracted significant interest over the past few years. [12][13][14][15][16][17] To achieve a thin-film oxide material based on the solgel method, a high-temperature thermal annealing process is usually necessary. It is necessary to remove the organic ligands and promote the condensation reaction to obtain a metal-oxide (MO) thin film from a xerogel structure. However, high-temperature treatment may limit further applications on flexible or plastic substrates. To date, a few techniques have been reported to overcome these drawbacks. Deep ultraviolet (DUV) or near-infrared (NIR) annealing have already been proposed as the critical step for fabricating thin-film oxide semiconductor devices. Kim et al., [18] Bolat et al., [19] and Moon et al. [20] showed that DUV or NIR annealing at low environmental temperatures can be successfully used to obtain thin-film devices with good carrier mobility and electrical properties. Furthermore, we recently showed that the use of NIR dyes can significantly improve the NIR laser curing of sol-gel indium-zinc-oxide (IZO) materials and allow their use as gas sensors. [21] One of the key parameters for the laser curing of MO precursors is to generate high absorption and efficient conversion to thermal energy. Because the sol-gel layers have an intrinsic low absorption in the NIR, it is necessary to add absorbers in the thin film to generate a local temperature increase. Highly conjugated organic molecules (NIR dyes), carbon black, and carbon nanotubes are potential candidates. Gold nanoparticles (Au NPs) have also proved their utility. Under light excitation, significant thermal effects can be generated, which are known as thermoplasmonic effects. [22][23][24][25][26][27] They correspond to the damping of a plasmon resonance, which creates a temperature increase at the surface of NP that depends on several parameters such as irradiance of the incident light, irradiated area, light wavelength, nature and morphology, surface density, nature of the surrounding medium, and the substrate. [28] In specific conditions, temperature increases such as several hundreds of degrees are achievable and have been used to trigger several Here, a new method is proposed for preparing gold nanoparticles (Au NPs)/ indium-zinc-oxide (IZO) nanocomposite thin films based on photothermal mechanisms with near-Infrared (NIR) laser annealing, which allows integrating the nanomaterial on fragile substrates such as thin glass, plastic sheets, or 3D printed pieces. The Au NPs are first prepared by NIR laser dewetting of a thin Au layer. Then, the Au NPs are used to locally cure the semiconductor material and provide suitable electronic properties owing to their efficient thermoplasmonic effect...

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Section: Discussionmentioning

confidence: 99%

Exploiting Thermoplasmonic Effects for Laser‐Assisted Preparation of Au Nanoparticles/InZnO Thin Film with Visible Range Photodetection Properties

Lin

Khitous

Zan

et al. 2021

Advanced Optical Materials

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“…They concluded that the Al‐doped ZnO MSM‐PDs have higher responsivity (5.63 A W −1 ) and detectivity (1.8 × 10 12 cm Hz 1/2 W −1 ) than undoped ZnO MSM‐PDs of (responsivity: 3.65 A W −1 , detectivity 1.3 × 10 12 cm Hz 1/2 W −1 ) at 365 nm. [ 122 ]…”

Section: Research Status Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.

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“…ZnO is a promising material for optoelectronic devices owing to its chemical stability, high electrical conductivity, and optical properties. [ 1–5 ] ZnO films, among several optoelectronic devices, have attracted attention as UV light detection devices owing to their wide direct bandgap energy (≈3.4 eV). [ 6–11 ] Fast response/recovery times, high responsivity, high reliability, and low noise are important characteristics of photodetectors (PDs).…”

Section: Figurementioning

confidence: 99%

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Lee

Baek

Kim

et al. 2020

Physica Rapid Research Ltrs

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Oxygen‐polar (O‐polar) and nonpolar ZnO‐based UV photodetectors (PDs) are fabricated using a sol–gel (SG) method on polarity‐controlled ZnO seed layers grown by atomic layer deposition (ALD). O‐polar c‐plane and nonpolar a‐plane ZnO films grown using the SG process are obtained using ALD‐grown ZnO seed layers on c‐plane and r‐plane sapphire substrates, respectively. In addition, the photoluminescence intensity of the O‐polar c‐plane ZnO film is higher than that of the nonpolar a‐plane ZnO film owing to the introduction of the ZnO seed layer. Therefore, the resulting photocurrent of the O‐polar c‐plane ZnO PD is higher than that of the nonpolar a‐plane ZnO PD. Furthermore, regardless of the crystal polarity, the carrier concentration and the mobility of the ZnO film deposited using the SG method significantly increase because of the ZnO seed layer. In particular, the carrier concentration of the nonpolar a‐plane ZnO film is 2.5 times higher than that of the O‐polar c‐plane ZnO film. Therefore, the time‐dependent photoresponsivity of the nonpolar a‐plane ZnO PD is faster than that of the O‐polar c‐plane ZnO PD. These results indicate that the ZnO seed layers can effectively control the crystal polarity of ZnO films grown using the SG method.

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Fibrous Al-Doped ZnO Thin Film Ultraviolet Photodetectors With Improved Responsivity and Speed

Cited by 48 publications

References 31 publications

Exploiting Thermoplasmonic Effects for Laser‐Assisted Preparation of Au Nanoparticles/InZnO Thin Film with Visible Range Photodetection Properties

Exploiting Thermoplasmonic Effects for Laser‐Assisted Preparation of Au Nanoparticles/InZnO Thin Film with Visible Range Photodetection Properties

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

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