Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond films

Xu, Ning; Latham, R.V.; Tzeng, Yonhua

doi:10.1049/el:19931063

Cited by 255 publications

(71 citation statements)

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“…Furthermore, the development of the chemical vapour deposition (CVD) technique for growing diamond at atmospheric pressure [4] accelerated research in this field [5][6].…”

Section: Introductionmentioning

confidence: 99%

Electron emission from conduction band of diamond with negative electron affinity

et al. 2009

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Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at conduction band minimum (CBM) utilising negative electron affinity (NEA). The significance of the result is that not only does it prove the utilisation of NEA as the dominant factor for the extremely low-threshold electron emission from heavily N-doped CVD diamond, but also strongly implies that such low-threshold emission is possible from other types of diamond, and even other materials having NEA surface. The low-threshold voltage, along with the stable intensity and remarkably narrow energy width, suggests that this type of electron emission can be applied to develop a next generation vacuum nano-electronic devices with long lifetime and high energy resolution.

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“…Furthermore, the development of the chemical vapour deposition (CVD) technique for growing diamond at atmospheric pressure [4] accelerated research in this field [5][6].…”

Section: Introductionmentioning

confidence: 99%

Electron emission from conduction band of diamond with negative electron affinity

et al. 2009

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“…15 At a current density below 10 Ϫ2 mA cm Ϫ2 there is no glow from the ITO which is perceptible to the naked eye. As the current density approaches 5ϫ10 Ϫ2 mA cm Ϫ2 there appears a uniform purple glow over the entire anode area which overlies the cathode.…”

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confidence: 99%

Nitrogen containing hydrogenated amorphous carbon for thin-film field emission cathodes

Amaratunga¹,

Silva²

1996

Applied Physics Letters

481

213

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Field emission measurements using 0.3 m thick nitrogen containing hydrogenated amorphous carbon films ͑a-C:H:N͒ on n ϩϩ -Si cathodes are reported. Onset emission fields as low as 4 V m Ϫ1 have been obtained using a flat plate anode configuration. Uniform emission is observed over the entire cathode area at current densities below 7ϫ10 Ϫ2 mA cm Ϫ2 . At higher current density preferential emission from spots is observed. The spot emission is imaged using the ITO coated plate anode. A model based on the a-C:H:N acting as a space charge interlayer on the n ϩϩ -Si is proposed to explain the emission at low electric fields.

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“…1,2 Electron field emission from diamond, 3,4 nitrogenated diamond, 5 ceasiated diamond, 6 and amorphous carbon, 7,8 have been reported at moderately low electric fields. One of the major factors that have contributed to electron field emission at low fields is attributed to the low electron affinity of carbon films.…”

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confidence: 99%

Self-texturing of nitrogenated amorphous carbon thin films for electron field emission

Silva

Amaratunga

Barnes

1997

Applied Physics Letters

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The electron field-emission process for nitrogenated amorphous carbon ͑a-C:H:N͒ thin films deposited using a magnetically confined hydrocarbon plasma is examined. The morphology of the films obtained using an atomic force microscope is compared to the field-emission properties. Beyond a chemical composition of 14 at. % nitrogen, the mirror smooth a-C:H:N films become self-texturing, and multiple ''domelike'' cathodes of nanometer scale are observed. The dimensions of these ''domelike'' cathodes varies with time, and after a 15 min deposition have dimensions of approximately 50 nm base diameter and 20 nm in height. When the electronic field emission of these textured films ͑N content 15 at. %͒ are measured, there is an enhancement in the emitted current density of ϳ2 orders of magnitude at an electric field of 20 V/ m, in comparison to the untextured films with a nitrogen content of 11 at. %.

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Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond films

Cited by 255 publications

References 0 publications

Electron emission from conduction band of diamond with negative electron affinity

Electron emission from conduction band of diamond with negative electron affinity

Nitrogen containing hydrogenated amorphous carbon for thin-film field emission cathodes

Self-texturing of nitrogenated amorphous carbon thin films for electron field emission

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