Field-effect passivation and degradation analyzed with photoconductance decay measurements

Chen, Yi-Yang; Hsin, Pi-Yu; Leendertz, Caspar; Korte, Lars; Rech, Bernd; Du, Chen-Hsu; Gan, Jon-Yiew

doi:10.1063/1.4876126

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…In order to make a quantitative understanding as well as to develop physical models for PPC, few standard test methods have been developed for characterizations viz. lifetime of photo-induced excess carriers, storage capacity of photo-induced charge, solar energy conversion efficiency [77,78,79,80,81]. Utilizing these tools, a thorough understanding of PPC can be developed to provide atomistic models behind it.…”

Section: Waiting Time Distributionmentioning

confidence: 99%

A review on realizing the modern optoelectronic applications through persistent photoconductivity

Sumanth¹,

Ganapathi²,

Rao³

et al. 2022

J. Phys. D: Appl. Phys.

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Optoelectronic devices are becoming increasingly important due to their compatibility with CMOS fabrication technology and their superior performance in all dimensions compared to currently available devices. Numerous modern applications are formulated based on various aspects of optoelectronic materials and devices, such as artificial intelligence, optical memory, optoelectronic synapses, humanoid-photodetectors, holography, solar cells, charge storage devices, bio-electronic devices, and so on. Persistent photoconductivity (PPC), an optoelectronic phenomenon that has piqued the scientific community's interest, is a novel approach to these modern applications. In this article, we highlighted the use of PPC in a variety of emerging optoelectronic applications. PPC is a light-induced mechanism that persists after light excitation is terminated, i.e., the response does not stop immediately but remains available for a period of time. In recent years, the time duration over which the response after turning off the illumination is available has been proposed for a variety of applications. PPC has primarily been explored from a theoretical point of view, with the application component being largely ignored. Very recently, the scientific community has started exploring the possible applications pertaining to PPC such as optoelectronic synapses, holography, optical memory, bioelectronics, and artificial intelligence. Depending on the nature of the material and the type of model used in the application, a variety of mechanisms can be used to modulate the charge trapping and de-trapping methodologies for a specific application. This topical review summarizes the origins of PPC, its control mechanism, and recent advances in a variety of materials such as metal oxides, superconductors, nanofibers, 2D-semiconductors, alloys, nitrides, organic materials, topological insulators, and so on. In addition, the paper has carefully explored the development of next-generation optoelectronic applications designed for industry 4.0 leveraging the PPC phenomenon.

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Section: Waiting Time Distributionmentioning

confidence: 99%

A review on realizing the modern optoelectronic applications through persistent photoconductivity

Sumanth¹,

Ganapathi²,

Rao³

et al. 2022

J. Phys. D: Appl. Phys.

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A method for modeling and deciphering the persistent photoconductance and long-term charge storage of ZnO nanorod arrays

Zhu

Xie

et al. 2016

Nano Res.

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On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Wilshaw

2017

Journal of Applied Physics

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The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes, and photodetectors. The theoretical model and a solution algorithm for surface recombination have been previously reported. However, their successful application to experimental data for a wide range of both minority excess carrier concentrations and dielectric fixed charge densities has not previously been shown. Here, a parametrisation for the semiconductor-dielectric interface charge Qit is used in a Shockley-Read-Hall extended formalism to describe recombination at the c-Si/SiO2 interface, and estimate the physical parameters relating to the interface trap density Dit, and the electron and hole capture cross-sections σn and σp. This approach gives an excellent description of the experimental data without the need to invoke a surface damage region in the c-Si/SiO2 system. Band-gap tail states have been observed to limit strongly the effectiveness of field effect passivation. This approach provides a methodology to determine interface recombination parameters in any semiconductor-insulator system using macro scale measuring techniques.

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Field-effect passivation and degradation analyzed with photoconductance decay measurements

Cited by 4 publications

References 26 publications

A review on realizing the modern optoelectronic applications through persistent photoconductivity

A review on realizing the modern optoelectronic applications through persistent photoconductivity

A method for modeling and deciphering the persistent photoconductance and long-term charge storage of ZnO nanorod arrays

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

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