Field-effect transistor (FET) bibliography 1967, 1968

Storm, H. F.

doi:10.1109/t-ed.1969.16887

“…B ulk heterojunctions of metal and semiconductor materials have long been of interest to fundamental science and device engineering due to the unique interaction of respective domains through the formation of the space-charge region, 1 which gives rise to numerous technological applications including Schottky barrier solar cells, 2 solid state lasers, 3 light-emitting diodes, 4 and field effect transistors. 5 Recently, the growing ability to fabricate metalÀ semiconductor (M-S) composites on a nanoscale has opened up new opportunities for designing multifunctional materials with properties that cannot be obtained in the bulk phase. Over the past decade, a wide variety of nanocomposite morphologies, including metal-core/semiconductor-shell heterostructures, 6À8 metal-tipped semiconductor nanocrystals (NCs), 9À17 and organically and nonepitaxially 6,18,19 coupled metalÀsemiconductor composites have all been proposed for manipulating energy at nanoscale with potential utilization of these nanomaterials in areas of photovoltaics and solar fuel production, 20 lasers, 21 and Schottky detectors.…”

mentioning

confidence: 99%

“…Bulk heterojunctions of metal and semiconductor materials have long been of interest to fundamental science and device engineering due to the unique interaction of respective domains through the formation of the space-charge region, which gives rise to numerous technological applications including Schottky barrier solar cells, solid state lasers, light-emitting diodes, and field effect transistors . Recently, the growing ability to fabricate metal−semiconductor (M-S) composites on a nanoscale has opened up new opportunities for designing multifunctional materials with properties that cannot be obtained in the bulk phase.…”

mentioning

confidence: 99%

Suppression of the Plasmon Resonance in Au/CdS Colloidal Nanocomposites

Khon

¹

,

Mereshchenko

²

,

Tarnovsky

³

et al. 2011

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The nature of exciton-plasmon interactions in Au-tipped CdS nanorods has been investigated using femtosecond transient absorption spectroscopy. The study demonstrates that the key optoelectronic properties of composite heterostructures comprising electrically coupled metal and semiconductor domains are substantially different from those observed in systems with weak interdomain coupling. In particular, strongly coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton excitations of carriers.

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“…3. Comparison of 1961 and 1978 integrated circuitsand special journal issues on IVfOS technology(75)(76)(77)(78)(79)(80)(81)(82). The main difficulty with producing MOS devices in the early 1960,s was that the t u r n -o n or threshold voltage was not stable, In fact it could drift 100V or more.…”

mentioning

confidence: 99%