The Evolution of Silicon Semiconductor Technology: 1952–1977

Deal, B. E.; Early, J.M.

doi:10.1149/1.2128981

Cited by 28 publications

(17 citation statements)

References 92 publications

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“…The silicon dioxide grown at 950 -1000°C and 3000 -7000A thick provides the junction diffusion mask and edge protection. Unlike the epoxy-silicon interface of the surface barrier detector, the properites of this silicon-silicon dioxide interface are fairly well understood [6]. The n+ and p+ contacts are diffused 0.2 -0.5pm deep (typically at 900 -950°C, 10-30 minutes) into the wafer and consequently are much more rugged than the metal contacts on the surface barrier detectors.…”

Section: Diffused Junction Detectorsmentioning

confidence: 99%

Silicon Radiation Detectors - Materials and Applications

Walton

Häller

1982

MRS Proc.

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Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by 1 ithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed--one in high~energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

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Section: Diffused Junction Detectorsmentioning

confidence: 99%

Silicon Radiation Detectors - Materials and Applications

Walton

Häller

1982

MRS Proc.

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“…The first transistor was invented in 1947 by Bardeen, Brattain, and Shockley at Bell Labs (Bardeen & Brattain, 1948). Since its invention, there have been numerous changes over the years with the field-effect transistor (FET) taking the forefront (Deal & Early, 1979;Chih-Tang, 1988). The development of complementary metal-oxide semiconductor (CMOS) technology (consisting of PMOS and NMOS; P for p-type and N for n-type, indicating the type of dopants used for the source-drain contacts) with individual FETs as either PMOS or NMOS is the current basis for chipsets used in digital integrated circuits (ICs) (Weste & Eshraghian, 1985).…”

Section: Introductionmentioning

confidence: 99%

“…In effect, as the FET size scaled, parasitic capacitance between the contacts and gate became a major issue which led to new designs and materials to be used (Bohr, 2011). A paradigm shift occurred in 2000 with the introduction of the three-dimensional (3D) finFET technology by Dr. Chenming Hu (Hisamoto et al, 2000). The 3D structure with the fin protruding out and the gate wrapped around three sides allowed better control of the channel current during on/off state and also overcame the problem of drain-induced barrier lowering, which was responsible for large off-state leakage currents due to the small channel size.…”

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

et al. 2017

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The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

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“…The semiconductor industry has used 'conventional' top-down approaches -photo and scanning beam lithographies, for example -to manufacture microelectronic devices at an enormous scale [13][14][15]. The essential elements of photolithographic patterning are illustrated schematically in Fig.…”

Section: Introductionmentioning

confidence: 99%

Unconventional methods for forming nanopatterns

Stewart

Motala

Yao

et al. 2006

Proceedings of the Institution of Mechanical Engineers, Part N:

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Nanostructured materials have become an increasingly important theme in research, in no small part due to the potential impacts this science holds for applications in technology, including such notable areas as sensors, medicine, and high-performance integrated circuits. Conventional methods, such as the top-down approaches of projection lithography and scanning beam lithography, have been the primary means for patterning materials at the nanoscale. This article provides an overview of unconventional methods -both top-down and bottom-up approaches -for generating nanoscale patterns in a variety of materials, including methods that can be applied to fragile molecular systems that are difficult to pattern using conventional lithographic techniques. The promise, recent progress, advantages, limitations, and challenges to future development associated with each of these unconventional lithographic techniques will be discussed with consideration given to their potential for use in large-scale manufacturing.

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The Evolution of Silicon Semiconductor Technology: 1952–1977

Abstract: not Available.

Cited by 28 publications

References 92 publications

Silicon Radiation Detectors - Materials and Applications

Silicon Radiation Detectors - Materials and Applications

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

Unconventional methods for forming nanopatterns

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