The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by biomolecule diffusion, charge screening, linear charge to surface-potential transduction, and Flicker noise. In this paper, we demonstrate that the recently introduced transistor technology called Negative Capacitor Field effect transistor (NCFET) offers nonlinear charge transduction and suppression of Flicker noise to dramatically improve the SNR over classical Boltzmann sensors. We quantify the SNR improvement by interpreting the experimental results associated with the signal and noise characteristics of 2D MoS2-based transistors. The combined sensitivity enhancement and noise rejection guarantee a high SNR of the NC-BioFET, making this device a promising candidate for realizing advanced integrated nanobiosensors. KEYWORDS 2D MoS2 FETs, Negative Capacitor Transistors, Nano Biosensors, Signal-to-Noise Ratio (SNR), Nonlinear response, SensitivityMany research groups worldwide are focused on developing highly sensitive, fast responding, and selective transistor-based biosensors. These sensors, known as BioFETs, allow label-free detection of biomolecules with the Limit of Detection (LOD) in the nano-and pico-molar concentration ranges 1 , potentially enabling many applications in personalized medicine 2 , early detection of diseases 3 , genome sequencing 4,5 , etc. A BioFET relies on the modulation of surface potential due to the charged biomolecules adsorbed on the gate electrode. Thus, the fundamental sensitivity limit of BioFETs depends on the diffusion of biomolecules 6 , surface charge screening, and linear "charge-to-surface potential" relationship 7 . These limitations apply to all FET-based biosensors, e.g. Dual-Gate FET 8 ; Silicon Nanowire *