Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters

Abstract

In order to apply various cold cathode nanoemitters in a field emission display (FED) and to achieve high brightness, a FED device structure with double gates and corresponding driving method have been proposed. Individual pixel addressing can be achieved by applying proper sequence of positive or negative voltage to the lower gate and upper gate, respectively. The feasibility of the device has been demonstrated by using carbon nanotube and tungsten oxide nanowire cold emitters. Display of moving images has been demonstrated and high luminance up to 2500cd∕m2 was obtained. The reported device structure is versatile for nanoemitters regardless of substrate or preparation temperature. The results are of significance to the development of FED using nanoemitters.

ZnS Nanostructure Arrays: A Developing Material Star

“…[ 1 ] In case of highly ordered nanostructure arrays, it not only has an advantage of faster device turn-on time, compactness, and sustainability compared to the conventional bulky technologies, but aligned nanostructures with a high packing density can signifi cantly enhance the FE properties of materials. [101][102][103] As discussed in two previous reviews, [ 1 , 104 ] the turnon fi eld, threshold fi eld, fi eld enhancement factor, FE current density, and its stability are the key parameters of one material FE performances. These properties are strongly dependent on the work function of an emitter surface, the radius of curvature of the emitter apex, the emission area, the aspect ratio and arrangement style of the emitter, etc.…”

Optimization of insulator layer with high breakdown voltage for 10 inch nanowire field emission display

“…Using self-assembled onedimensional nanomaterial cathode such as CNTs can easily achieve large area and reduce the manufacturing cost. Recently, FEDs using other one-dimensional materials cathode such as tungsten oxide and CuO nanowire have also been reported [3,4].…”

A study of control growth of three-dimensional nanowire networks of tungsten oxides: From aligned nanowires through hybrid nanostructures to 3D networks

“…Thus, various techniques for growth of nanostructures of tungsten oxides have been developed [4,[7][8][9][10][11][12][13][14][15][16][17][18], and different types of tungsten oxide nanostructure have been reported, such as W 18 O 49 nanowire [11], W 18 O 49 nanorod [12], W 18 O 49 nanotip [13], WO 3-d 3D nanowire network [4], WO 2.9 two-dimensional (2D) nanowire network [14], mixture of WO 2 and WO 2.9 nanorods [15], WO 3 nanowire [16], hollow crystalline tungsten oxide fiber [17] and tungsten oxide tree-like structure [18]. In addition, experimental results have shown that one-dimensional (1D) nanostructures of some tungsten oxides have very good field emission (FE) properties with low turn-on field and threshold field being very closed to the best values of carbon nanotube [11,13,15], and that 3D tungsten oxide nanostructures can exhibit ultrasensitive and highly selective properties in gas sensing [19].…”

“…Nanostructured materials of tungsten oxides are attractive due to their potential application in gasochromic devices [7], electrochromic device [8], field emission display device [9], and semiconductor gas sensors [10]. Thus, various techniques for growth of nanostructures of tungsten oxides have been developed [4,[7][8][9][10][11][12][13][14][15][16][17][18], and different types of tungsten oxide nanostructure have been reported, such as W 18 O 49 nanowire [11], W 18 O 49 nanorod [12], W 18 O 49 nanotip [13], WO 3-d 3D nanowire network [4], WO 2.9 two-dimensional (2D) nanowire network [14], mixture of WO 2 and WO 2.9 nanorods [15], WO 3 nanowire [16], hollow crystalline tungsten oxide fiber [17] and tungsten oxide tree-like structure [18].…”