A facile and novel one-step method of growing nickel-cobalt layered double hydroxide (Ni-Co LDH) hybrid fi lms with ultrathin nanosheets and porous nanostructures on nickel foam is presented using cetyltrimethylammonium bromide as nanostructure growth assisting agent but without any adscititious alkali sources and oxidants. As pseudocapacitors, the as-obtained Ni-Co LDH hybrid fi lm-based electrodes display a signifi cantly enhanced specifi c capacitance (2682 F g −1 at 3 A g −1 , based on active materials) and energy density (77.3 Wh kg −1 at 623 W kg −1 ), compared to most previously reported electrodes based on nickel-cobalt oxides/hydroxides. Moreover, the asymmetric supercapacitor, with the Ni-Co LDH hybrid fi lm as the positive electrode material and porous freeze-dried reduced graphene oxide (RGO) as the negative electrode material, exhibits an ultrahigh energy density (188 Wh kg −1 ) at an average power density of 1499 W kg −1 based on the mass of active material, which greatly exceeds the energy densities of most previously reported nickel or cobalt oxide/hydroxide-based asymmetric supercapacitors.
A novel 1D/1D nanocomposite-based photodetector is successfully fabricated from high-crystalline ZnS/ZnO biaxial nanobelts for the first time. Optimized performance of the ZnS/ZnO nanobelt photodetector is much better than that of pure ZnS or ZnO nanostructures, with a wide-range UV-A light photoresponse, high sensitivity, and very fast response speed.
Low-dimensional (LD) nanostructures are ideal systems for constructing high-performance photodetectors due to their tailored geometries, high surface-area-to-volume ratios and rationally designed surfaces. This article provides a brief summary about recent progress on LD nanostructures based visible-light-blind ultraviolet photodetectors. The current challenges and an outlook on the future developments of this research field are summarized and highlighted.
Thin SnO2 nanowires with uniform diameter and large surface‐to‐volume ratio are synthesized, and a single wire is used to fabricate a high‐performance UV photodetector. An ultrahigh external quantum efficiency of 1.32 × 107 is achieved, which is about four orders of magnitude larger than that of conventional SnO2 photodetectors.
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