An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

Hu, Linfeng; Yan, Jian; Liao, Meiyong; Xiang, Hongjun; Gong, X. G.; Zhang, Lide; Fang, Xiaosheng

doi:10.1002/adma.201200512

Cited by 446 publications

(303 citation statements)

References 26 publications

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“…Some works have been done to broaden the response of ZnO from UV to wider range 13, 14, 15, 16, 17, 18, 19, 20. For example, Kouklin15 doped Cu impurities into ZnO NWs, which results in orders of magnitude enhancement of the spectral sensitivity over both UV and vis spectral ranges.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO/Si branched NWs heterojunction photodiodes via growing ZnO nanowires on p‐type Si substrate show a 12.8 mA W −1 responsivity at around 900 nm 17. However, the doped structures have flaws in stability and reproducibility especially for p‐type doping,18 and the synthesis process for core–shell usually involves a complex adjustment and also the lattice matching should be considered for this structure 19, 20…”

Section: Introductionmentioning

confidence: 99%

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An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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“…6 Because of the large surface-to-volume ratio and quantum confinement effect, which can modify the band gap, density of states, adsorption effect and also can shorten the transit time of the charge carrier and prolong the photocarrier lifetime, 1D nanostructures show huge advantage over the corresponding bulk counterpart and thin film. 7 Usually, the photodetectors based on 1D semiconductor micro/nano-structures show high sensitivity, large photocurrent gain and fast response speed. 4,8 Up to date, various 1D inorganic materials, such as ZnO, GaN, InAsSb, ZnS, Zn x Cd 1−x Se, ZnTe, CdS, In 2 Te 3 , InSe, have been used to fabrication photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Broad spectral response photodetector based on individual tin-doped CdS nanowire

et al. 2014

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High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

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“…Zinc oxide (ZnO), one of the most important functional materials, has attracted wide attention because of its unique semiconducting, piezoelectric, and optoelectronic properties, which have promising applications in electronics [1], optoelectronics [2], photodetectors [3,4], power generators [5] and microfluidic devices [6], to name a few. In the past few decades, substantial effort has been devoted to the optimization of its chemical composition [7][8][9], morphology [1,[10][11][12][13], and crystal size [14,15].…”

Section: Introductionmentioning

confidence: 99%

Growth of Ultra-Long ZnO Microtubes Using a Modified Vapor-Solid Setup

Heng

Chakraborty

et al. 2014

Micromachines

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Abstract:In this work, we have modified the experimental setup for a vapor-solid (VS) process to synthesize Zinc oxide (ZnO) microtubes (MTs) with lengths up to 3 mm during a 90-min growth period. The critical idea behind this modification is to control the distribution of Zn vapor along the Si substrates. The morphology evolution of ZnO structures with the increasing reaction time was particularly explored. We found that, within the 90-min growth period, four different types of ZnO microstructures appeared in this synthesis process: microrods (MRs), short MTs, two-tier structures, and long MTs. Growth mechanisms were proposed to interpret the formation of these structures.

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An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

Cited by 446 publications

References 26 publications

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Growth of Ultra-Long ZnO Microtubes Using a Modified Vapor-Solid Setup

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