New concept ultraviolet photodetectors

Chen, Hongyu; Liu, Kewei; Hu, Linfeng; Al-Ghamdi, Ahmed A.; Fang, Xiaosheng

doi:10.1016/j.mattod.2015.06.001

Cited by 765 publications

(442 citation statements)

References 87 publications

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“…For our Gr/Si UV photodetector, J ph and J dark are 12 μA cm −2 and 0.1 nA cm −2 (under vacuum) at zero-bias (selfpowered) mode, respectively, leading to R I = 0.12 A W −1 at 365 nm UV light. The responsivity and dark current density are comparable to the-state-of-art compound semiconductor Schottky photodetectors such as GaN (R I~0 .10 A W −1 , J dark~5 00 nA cm −2 ) and SiC (R I~0 .03 A W −1 , J dark~0 .25 nA cm −2 ) (see refs [1][2][3][4][5][6][7][8]. The dark current density of our Gr/Si photodetector is smaller than the typical metal-semiconductor Schottky photodetectors owing to the finite density of states of 2D materials and smaller electronic injection ratio from silicon to graphene, as compared with the traditional metal-semiconductor contact.…”

Section: Resultsmentioning

confidence: 76%

“…Ultraviolet (UV) photodetectors could find a wide range of applications, [1][2][3][4][5][6][7][8] such as environmental monitoring, 3 biological and chemical analysis, 4 flame detection, 5 astronomical studies, 8 internet-of-things sensors, 9 and missile detection. 10 Recently, wide band-gap (WBG) semiconductors (SiC, 11 GaN, 12 ZnO, 13 TiO X , 14 etc.)…”

Section: Introductionmentioning

confidence: 99%

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A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

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Section: Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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“…It has attracted increasing attentions due to its potential application in a variety of fields. In particular, ZnO has been proposed as an active material in electronic devices [1], ultraviolet light emitting diodes [2], transparent conductive films [3,4], piezoelectric devices [5], gas sensor [6][7][8], solar energy cells [9][10][11] and photodetectors [12,13]. It is well known that the optoelectronic properties can be adjusted by doping appropriate dopants into ZnO and the defects in ZnO can lead to an emission band between 420 and 700 nm, which can generate white light.…”

Section: Introductionmentioning

confidence: 99%

Microstructure, surface morphology and optical properties of Na x Cu y Zn1−x−y O thin films

Zhao

et al. 2015

J Mater Sci: Mater Electron

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Na x Cu y Zn 1-x-y O thin films were prepared by sol-gel method on quartz glass. The effect of Na (or Cu) doping on the microstructure, surface morphology, optical properties of the thin films was investigated. The Na 0.1 Cu 0.01 Zn 0.89 O thin film has the largest average grain size and the best preferential c-axis orientation, which may be attributed to the difference in ionic radius between Zn and Na (or Cu). The Na 0.1 Cu 0.01 Zn 0.89 O thin film also presents denser morphology with little voids and the smallest optical band gap, which may be attributed to band edge bending and the larger grain size. The largest intensity of A 1 (LO) modes may be due to the major structural defect concentrations. The quenching of UV and visible emissions, which may be attributed to the increase of non-radiative recombination transition, has been observed in the Na 0.1 Cu 0.01 Zn 0.89 O and Na 0.1-Cu 0.02 Zn 0.88 O thin films.

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“…1 In addition, in many cases UV photodetectors capable of operating at high temperatures (T) with high performance are greatly required. 2 The conventional UV photodetector devices are usually based on p-n and p-i-n junctions, Schottky diodes, and metal-semiconductor-metal (MSM) structures. 3,4 As a standard, such devices exhibit a good performance at room temperature (RT), i.e., fast response speed and low noise level.…”

mentioning

confidence: 99%

“…Within this model, the key role in SPV generation plays the band structure, in particular the valence band offset (VBO) between an insulator and GaN. According to most of the reports, SiO 2 20 On the other hand, most of the reports referring to SiN/GaN claim that VBO is slightly negative 21,22 and only some works give positive VBO of about 0.8 eV (Ref. 16) for this system.…”

mentioning

confidence: 99%

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Matys

Adamowicz

Żytkiewicz

et al. 2016

Applied Physics Letters

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We investigated the surface photovoltage (SPV) effect in n-GaN layers passivated with various insulators, i.e., Al2O3, SiO2, and SiN for ultraviolet (UV) light detection. We revealed that SPV in SiN/GaN shows markedly different behaviour than in oxide/GaN, i.e., the photo-signal exhibited very fast response (1 s) and recovery (2 s) times, contrary to oxide/GaN, and it was thermally stable up to 523 K. Furthermore, SPV spectra for SiN/GaN showed a sharp cut-off edge directly corresponding to the GaN band gap. We explained these results in terms of the different band structure of SiN/GaN and oxide/GaN junctions. All the observed properties of SPV response from SiN/GaN indicate that this relatively simple system can be applied to sensitive high temperature visible-blind UV detection. Published by AIP Publishing

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New concept ultraviolet photodetectors

Cited by 765 publications

References 87 publications

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Microstructure, surface morphology and optical properties of Na x Cu y Zn1−x−y O thin films

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

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