Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

a b s t r a c tNitrogen-doped amorphous carbon thin films (a-CN x ) were prepared on silicon substrate by pulsed laser deposition process using methane (CH 4 ) and nitrogen (N 2 ) as source gas. The electrical properties of a-CN x films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (I D /I G ) increases with higher nitrogen concentration, which means that sp 2 -clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CN x films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.

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Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Ray

Mbiombi

Papakonstantinou

2014

Current Applied Physics

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Effect of annealing on structure and haemocompatibility of tetrahedral amorphous hydrogenated carbon films

Zhang

Chen²,

Li³

et al. 2008

Materials Letters

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Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

Yang-Ming¹,

Mo²,

Li³

et al. 2004

Chinese Phys. Lett.

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Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

Cited by 5 publications

References 18 publications

Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Effect of annealing on structure and haemocompatibility of tetrahedral amorphous hydrogenated carbon films

Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

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