Field emission from zinc oxide nanopins

Xu, Chunxiang; Sun, Xiao Wei

doi:10.1063/1.1625774

Cited by 342 publications

(241 citation statements)

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“…If it is too low, then the emission current density will be low; if it is too high, then the local electric field around the emitter tips will have an electrostatic screening effect induced by the neighboring nanowires, which generally lowers the β value [112,338]. Φ is the emitter work function, which is about 5.4 eV for ZnO [337]. A and B are two constants with values of 1.56 × 10 10 (A·V -2 ·eV) and 6.83 × 10 3 (V·eV -3/2 ·μm -1 ), respectively.…”

Section: Field Emission Propertiesmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Field Emission Propertiesmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…ZnO possesses outstanding physical properties including a wide direct band gap, high excitonic binding energy, and high thermal and chemical stabilities which promise a range of applications in diverse areas such as ultraviolet ͑UV͒ lasing; 1 field emission displays, 2 resonators, 3 and sensors. 4 ZnO nanostructures of various morphologies are required for different applications.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

Kumar

McGlynn

Biswas

et al. 2008

Journal of Applied Physics

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ZnO nanostructures were grown on Au-catalyzed Si silicon substrates using vapor phase transport at growth temperatures from 800 to 1150°C. The sample location ensured a low Zn vapor supersaturation during growth. Nanostructures grown at 800 and 850°C showed a faceted rodlike morphology with mainly one-dimensional ͑1D͒ growth along the nanorod axis. Samples grown at intermediate temperatures ͑900, 950, and 1050°C͒ in all cases showed significant three dimensional ͑3D͒ growth at the base of 1D nanostructures. At higher growth temperatures ͑1100 and 1150°C͒ 3D growth tended to dominate resulting in the formation of a porous, nanostructured morphology. In all cases growth was seen only on the Au-coated region. Our results show that the majority of the nanostructures grow via a vapor-solid mechanism at low growth temperatures with no evidence of Au nanoparticles at their tip, in sharp contrast to the morphology expected for the vapor-liquid-solid ͑VLS͒ process often reported as the growth mechanism on Au-catalyzed Si. We see VLS growth only at 900 and 950°C. Transmission electron microscopy data indicate that the nanorods are single crystalline without gross structural defects. Luminescence data reveal strong ultraviolet emission in all samples and weak defect emission in the visible region. We discuss the growth mechanisms with reference to various models in the literature and suggest reasons for VLS growth only in a narrow temperature range. We also discuss the potential effects of the Zn oxidation reaction on the growth morphologies, aspects largely ignored in the general literature on this subject.

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“…The field emission characteristics of various ZnO nanostructures, such as nanotetrapods, 1) nanorods, 2) nanocones, 2) nanowires, 3) nanopins, 4) nanoneedles, 5) nanotubes, 6) and nanofibers, 7) have been investigated. In addition, ZnO nanostructures exhibit strong environmental endurance compared with carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Properties and field emission characteristics of Ga:ZnO whiskers

Ueda

Yoshida

Saitoh

2009

J. Ceram. Soc. Japan

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Ga:ZnO whiskers were grown by atmospheric chemical vapor deposition on single crystalline silicon (100). By adjusting the concentration of the gallium dopant, the crystallite density and radius of curvature could be varied. The c-axis orientation of the Ga:ZnO crystallite was less than that of the Al:ZnO crystallite. The field emission characteristics of Ga:ZnO whisker emitters were investigated by varying the crystallite density and radius of curvature. Moreover, when the crystallite density was in the range 0.8 × 10 4 -1.6 × 10 4 /mm 2 and the crystallite radii of curvature were in the range 46-106 nm, the electric field, E, necessary to obtain a current density, J, of 100 μA/cm 2 was in the range 5.3-5.7 V/μm.

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Field emission from zinc oxide nanopins

Cited by 342 publications

References 20 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

Properties and field emission characteristics of Ga:ZnO whiskers

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