We show field emission from excimer laser crystallized ͑ELC͒ hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10 Ϫ5 A ͑current densitiesϷ0.04 A/cm 2 ͒ at threshold fields less than 15 V/m in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.