Field emission properties of AuSi eutectic

Zhirnov, V.V.; Bormatova, L.V.; Givargizov, E. I.; Plekhanov, P. S.; Son, U. T.; Galdetsky, A.V.; Belyavsky, B.A.

doi:10.1016/0169-4332(95)00362-2

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…TEM and HRTEM images in Figure 1 illustrate that Au-Si nano-particles had been formed at the surface of Au20/SiNWs after post-annealing at 650°C, and that the Au-Si nano-particle-decorated SiNWs had been fabricated. Previous studies show that gold silicide, such as Au 2 Si [ 31 , 32 ] and Au m Si n [ 33 ], have been observed, and some kind of composition has good optical, excellent electron transportation, and FE properties. For the Au 2 Si nano-particle-decorated SiNWs, electrons transport near and on the surface of the composite region.…”

Section: Resultsmentioning

confidence: 99%

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires

et al. 2011

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Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

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Section: Resultsmentioning

confidence: 99%

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires

et al. 2011

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“…For instance, the 70 nm Au-Si eutectic nanocone-shaped structures exhibited an initiating field only 10 V · m −1 , 101 while when the Au-Si eutectic was fabricated with a tip shape a size of several m, a large field current 300 A was obtainable on the tip. 102 Although such an Au-Si alloy has excellent electronic characteristics, its mechanical properties are generally detrimental to the product quality. According to Komatasu and Kiritani, 103 an Au-Si eutectic became brittle upon subjection to the cold-rolling process.…”

Section: Nanowire Fabrication By Mechanical Injection Using Aao As Tementioning

confidence: 99%

Fabrication and Characterization of Highly-Ordered Valve-Metal Oxide Nanotubes and Their Derivative Nanostructures

Chen¹,

Dong²,

Luo³

2012

Rev Nanosci Nanotech

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Highly ordered and vertically aligned straight nanotubes can be fabricated using an electrochemical anodization method on the valve metal surfaces, and a variety of nanostructures can be derived from these nanotubes. These nanomaterials have found a wide range of applications, especially in the fields of renewable energy generation and storage. This review provides step-by-step guidelines about the fabrication details and parameters of these nanomaterials, focusing on the systems originated from the metals of Al, Ti and Zr. Based on the fabrication of these nanotubes, different methods were developed to produce uniform metal nanowires using electrodeposition and mechanical injection, nanospheres and nanowhiskers on the top surfaces of the nanotubes, and dye-sensitized solar cells using anodic Ti oxide. These nanostructures and their phase transitions were characterized in detail by X-ray diffraction and electron microscopy techniques. Finally, towards the commercial applications of the nanotube related materials, fabrication of large-scale porous films was proposed.

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“…As an Au-Si eutectic has a useful field-emission property, it serves for panels or displays; for example, a 70-nm Au-Si eutectic tip has an initiating field only 10 V m −1 (Wan et al, 2004). Furthermore, when an Au-Si eutectic is set on a 10-m tip, a large field current 300 A is obtainable on the tip (Zhirnov et al, 1996). Although such an Au-Si alloy has excellent electronic characteristics, the mechanical properties of such an Au-Si alloy are generally detrimental to product quality.…”

Section: Introductionmentioning

confidence: 98%