1999
DOI: 10.1116/1.590505
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Field emission properties of BN coated Si tips by pulsed ArF laser deposition

Abstract: Thin films of boron nitride (BN) were deposited by pulsed ArF laser ablation of a pyrolitic BN target in an N2 ambient with and without substrate bias and also in a nitrogen plasma. The structural property studies with infrared and reflection high-energy electron diffraction show that the films possess cubic BN and hexagonal or amorphous phase of BN. Deposition of cubic BN is enhanced by application of substrate bias whereas crystallinity is degraded by the introduction of nitrogen plasma. The field emission o… Show more

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Cited by 11 publications
(6 citation statements)
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“…The electron emission results are reproducible over several measurement cycles and independent of the vacuum gap. The emission threshold for sample 1 is similar to the one reported for single-crystal Si tips [11,12], polycrystalline Si tips [11,13,14], Si nanowires [15], graphite films [16], and is higher then the typical values of 2-5 V/µm reported for carbon nanotubes [17]. The data plotted in Fig.…”
Section: Contributedsupporting
confidence: 73%
“…The electron emission results are reproducible over several measurement cycles and independent of the vacuum gap. The emission threshold for sample 1 is similar to the one reported for single-crystal Si tips [11,12], polycrystalline Si tips [11,13,14], Si nanowires [15], graphite films [16], and is higher then the typical values of 2-5 V/µm reported for carbon nanotubes [17]. The data plotted in Fig.…”
Section: Contributedsupporting
confidence: 73%
“…Previous studies indicate that the extent of BN-AlN solubility is extremely limited because of the significant microstructural differences. [162][163][164][165] Effect of stoichiometry As a promising material for many applications, c-BN has been investigated by a variety of ion-or plasmaassisted deposition techniques. These investigations have led to a set of thumb rules for the formation of c-BN in terms of scaling parameters like ion-to-atomic boron and nitrogen flux ratios, ion energy, and substrate temperature.…”
Section: Effect Of Substratesmentioning
confidence: 99%
“…Thin films of boron nitride, deposited by pulsed laser ablation of a pyrolitic BN target in a N 2 ambient with substrate bias have been reported. 119 Recently, Yang et al 73 developed a time-dependent biasing technique (TDBT) for c-BN thin film preparation by low-pressure inductively coupled plasmaenhanced CVD (ICP-CVD). Under these optimal growth conditions, high quality stoichiometric c-BN films were prepared with more than 98% cubic phase, together with an initial sp 2 -bonded BN transition layer as thin as 3 nm.…”
Section: Effect Of Biasingmentioning
confidence: 99%
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“…It is reported that an emission current of 57 A was obtained at an applied voltage of 5 V from a diamond-coated silicon tip, 24,25 whereas a glassy carbon field emitter exhibits an emission current of 50 A at an applied voltage of 1340 V. 26 The BN coated silicon emitters have demonstrated lower emission threshold voltage and higher emission current of 100 A. 27 On the other hand, an emission current above 15 A at an applied voltage of 130 V was obtained from a tungsten-coated silicon emitter. 28 Similarly, diamond-coated Mo emitters have also shown an emission current of 15 A and are attributed to an electron tunneling through the metal onto the diamond interface.…”
Section: B Field Emission Measurementsmentioning
confidence: 99%