Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Saito, Wataru; Kakiuchi, Y.; Nitta, T.; Saito, Yasunobu; Noda, T.; Fujimoto, Hiroki; Yoshioka, Akira; Ohno, Tetsuya; Yamaguchi, Masakazu

doi:10.1109/led.2010.2048741

Cited by 103 publications

(54 citation statements)

References 9 publications

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“…In addition, as obtained from our technology computer-aided design (TCAD) calculation using ATLAS (shown in Fig. 7), FP reduces the peak electric field on the drain side of the gate edge, weakening the charge injection and eventual trapping on the AlGaN surface during the offstate, consistent with the previous works of Saito et al 26) and Karmalkar et al 32) The reduction in density of trapped electrons is manifested as reduction in corresponding α i after FP introduction. For instance, in Table II, considering trap 3, α i changes from 95 (device A) to 88 (device B) after FP introduction.…”

Section: Experimental Methodssupporting

confidence: 88%

“…[21][22][23] Meanwhile, field plate (FP) technology has been a recognized approach not only for extending device breakdown voltage but also for reducing current collapse by relaxing the electric field strength at the drain edge of the gate. [24][25][26] Furthermore, we have found that the partial depletion of two-dimensional electron gas (2DEG) as a result of below pinch-off gate voltage stress can be almost instantly recovered by "field effect" action of a subsequent positive FP voltage. 27) With the aim of achieving a true collapse-free operation, we have been combining some of these different approaches against current collapse.…”

Section: Introductionmentioning

confidence: 99%

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Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar¹,

Yoshida²,

Tokuda³

et al. 2016

Jpn. J. Appl. Phys.

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We report on the highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by combined application of prepassivation oxygen (O 2 ) plasma treatment and gate field plate (FP) structures schemes. Four different devices were fabricated in this work: (1) conventional HEMT as reference device, (2) field-plated HEMT, (3) O 2 plasma-treated HEMT, (4) both field-plated and O 2 plasma-treated HEMT. Analysis of dependence of normalized dynamic R on (NDR) on gate pulse on-time (t on ) revealed that gate-FP reduces the emission time constant (τ i ) of trapped electrons while O 2 -plasma treatment decreases the density of traps. For all measurement conditions, the device with both FP and O 2 plasma treatment exhibited the least NDR compared to devices with either FP or O 2 plasma treatment only, demonstrating for the first time the compatibility of both O 2 plasma treatment and FP schemes in mitigating current collapse.

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Section: Experimental Methodssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar¹,

Yoshida²,

Tokuda³

et al. 2016

Jpn. J. Appl. Phys.

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“…The surface charges become redistributed under the influence of the high electric field concentration at the gate edge. As shown in the figure, the use of a field plate can alleviate such electric field crowding [5]. An appropriate surface passivation film can also be employed to reduce the number of surface states [6].…”

Section: Current Collapsementioning

confidence: 99%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

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Abstract:The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600 V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normallyoff operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed.

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“…This type of field plate alleviates the high electric field formed at the edge of the gate by reducing the peak electric field as demonstrated by simulation data [8,11]. Applying field plates leads not only to an improved breakdown voltage but also to a reduction of the gate leakage current and the electron trapping, which, in turn, improves the current collapse performance [7,9,10].…”

Section: Introductionmentioning

confidence: 97%

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Cho

Ahn

Kim

et al. 2015

Journal of the Korean Physical Society

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An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the Γ-shaped gate with the "head" of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the "foot" of the gate which showed a possibility for a gate length reduction.

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Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Cited by 103 publications

References 9 publications

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Current status of GaN power devices

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

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