2021
DOI: 10.1109/jeds.2021.3130305
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Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

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Cited by 19 publications
(7 citation statements)
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“…It is also reported that the performance of the β-Ga 2 O 3 pn heterojunction is significantly affected by deep-level traps inside the devices [17][18][19]. By reducing the deep-level trap concentration, improved performance was obtained in the NiO/β-Ga 2 O 3 p-n heterojunction, including a reduced ideality factor and an enlarged reverse blocking voltage [17].…”
Section: Introductionmentioning
confidence: 97%
“…It is also reported that the performance of the β-Ga 2 O 3 pn heterojunction is significantly affected by deep-level traps inside the devices [17][18][19]. By reducing the deep-level trap concentration, improved performance was obtained in the NiO/β-Ga 2 O 3 p-n heterojunction, including a reduced ideality factor and an enlarged reverse blocking voltage [17].…”
Section: Introductionmentioning
confidence: 97%
“…[29] However, there is very little work on optimizing this heterojunction performance for hightemperature applications which is currently limited to 275 °C. [30] In this work, we demonstrate fabrication, characterization, and modeling of NiO/β-Ga 2 O 3 heterojunctions for hightemperature applications up to 410 °C. Textured polycrystalline p-NiO layers are grown using pulsed laser deposition (PLD) on single-crystal n-type β-Ga 2 O 3 without any drift layer, patterned using a reactive ion etch (RIE) process, and subjected to a high-temperature annealing step.…”
Section: Introductionmentioning
confidence: 99%
“…[ 29 ] However, there is very little work on optimizing this heterojunction performance for high‐temperature applications which is currently limited to 275 °C. [ 30 ]…”
Section: Introductionmentioning
confidence: 99%
“…However, the absence of p-type β-Ga 2 O 3 makes the breakdown voltage (BV) and the BFOM far lower than its theoretical limit. To overcome this challenge and obtain the advantages of p-n junction devices, various p-type oxides have been hetero-integrated with β-Ga 2 O 3 [5,6] , among which NiO with E g of 3.8-4 eV and controllable doping concentration is proved to be greatly suitable for β-Ga 2 O 3 power devices [7,8] . Moreover, great advances have been achieved in BFOM of NiO/β-Ga 2 O 3 power heterojunction FETs [9,10] .…”
Section: Introductionmentioning
confidence: 99%