Field programmable spin-logic based on magnetic tunnelling elements

Richter, Ralf P.; Boeve, H.; Bär, L.; Bangert, J.; Klostermann, Ulrich; Wecker, J.; Reiss, Günter

doi:10.1016/s0304-8853(01)00733-8

Cited by 37 publications

(17 citation statements)

References 5 publications

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“…Recently, novel concepts for magnetic logic were proposed using MRAM-like elements [12,13,14]. Direct programmability of logic gates, i.e.…”

Section: Introductionmentioning

confidence: 99%

Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy

Ney

2010

Materials

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Dilute magnetic semiconductors (DMS) are envisioned as sources of spin-polarized carriers for future semiconductor devices which simultaneously utilize spin and charge of the carriers. The hope of discovering a DMS with ferromagnetic order up to room temperature still motivates research on suitable DMS materials. Two candidate wide-band gap DMS are Gd:GaN and Co:ZnO. We have used hard X-ray absorption spectroscopy (XAS) and in particular X-ray linear dichroism (XLD) and X-ray magnetic circular dichroism (XMCD) to study both DMS materials with element specificity and compare these findings with results from integral SQUID magnetometry as well as electron paramagnetic resonance (EPR).

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“…Recently, novel concepts for magnetic logic were proposed using MRAM-like elements [12,13,14]. Direct programmability of logic gates, i.e.…”

Section: Introductionmentioning

confidence: 99%

Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy

Ney

2010

Materials

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“…The current of two input lines is used to switch the magnetization of one of the two layers and consequently altering the magnetoresistance of the element from low (logic 1) to high (logic 0) or vice versa. As proposed by Black and Das [12] and realized experimentally by Richter et al [13] programmable magnetologic gates can be obtained by controlling the switching threshold of one layer, for instance, electrically [12] or by a perpendicular magnetic field [13]. Depending on the coercive field, both or only one input lines need to be addressed for switching, corresponding to the logic AND and OR functions, respectively.…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable logic with single magnetorestistive elements

Koch

Ney

Pampuch

2004

phys. stat. sol. (c)

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PACS 85.70.Ay, 87.75.DdThe logic gates of present computers are based on transistors and increasing the computational power means increasing their integration density. Among others, the utilization of magnetism is a promising alternative. A new concept for a magnetic logic gate is discussed, which is based on a single magnetoresistive element addressable by three independent input lines. Each of these gates can represent one out of at least ten logic functions, among them the four elementary functions AND, OR, NAND and NOR, the two more complex funtions XOR and XNOR as well as two reversible ones, CNOT and CCNOT. The functionality of the proposed gate can be pre-programmed with processor speed, its output is non-volatile. As a first application, which takes full advantage of the reprogrammability and non-volatility of the logic elements, a compact design of a magnetic full adder is discussed.

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“…Then, the chip can be simply adjusted to the anticipated task. MTJs are the promising base for this, and the most advanced type of MR logic, the comparative logic, is proven to function adequately [5][6][7].…”

Section: Magnetoresistive Logicmentioning

confidence: 99%