Field stop IGBTs with dynamic clamping capability - a new degree of freedom for future inverter designs?

Laska, T.; Baßler, M.; Miller, G.; Schäffer, C.; Umbach, Frank

doi:10.1109/epe.2005.219608

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…Recently [3]~it has been shown that the reverse recovery behaviour of 13-kV diodes can be improved significantly by applying a new field stop concept based on a deep buried field stop layer in front of the n+ emitter. Talking about the IGBT as the key switch in these application fields in detail one must say that this technology has seen considerable innovation over the last decade regarding loss reduction as well as chip shrink resulting in more and more compact and cheaper packages as well as inverters.…”

Section: F 13-kv Light-triggered Tandem Thyristor With Integrated Ovmentioning

confidence: 99%

Power semiconductors state-of-art and development trends

Lorenz

2007

2007 7th Internatonal Conference on Power Electronics

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WEB1·1Abstract-System integration and high power density of monolithic and multi-chip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimized to meet this target and to keep the overall ruggedness, sensitivity towards EMI and long term reliability, Silicon utilization system reliability and power units miniaturization are the key factors.Power semiconductors are primarily used to control the flow of energy between the energy source and the load, and to do so with great precision, with extremely fast control times and with low dissipated power.The drive towards rational use of energy, miniaturization of electrical systems and power management has given im petus to the revolutionary development of power semiconductors and power electronic systems over the last 20 years.In this paper new technologies, advanced devices concepts and future system aspect for industrial segments are discussed. In these fields of applications there are huge requirements towards system dynamic characteristic, overload capability, ruggedness behaviour and reliability.High operating tem peratures is required, in the industrial high blocking voltage capabilities are needed. I. HIGH-VOLTAGE THYRISTORS DEVELOPMENTHigh-power thyristors with direct light-triggering and integrated protection functions can be utilized advantageously for applications in which several thyristors are connected in series, because this enables a significant reduction in the number of components necessary for the construction of high-power thyristor converters. This in turn leads to greater reliability and lower fabrication costs. It applies in particular to High-Voltage DC (HVDC) transmission, Static Var Compensation (SVC), converters for medium voltage drives, and also to certain pulse power applications. B. 8-kV light-triggered thyristor with integratedprotection functionsThyristors in HVDC converter stations have to be protected against several failures that may appear under standard operation. There are three classical failure events thyristors must be protected against:-voltage pulses with a too high amplitude (overvoltage), -voltage pulses with a too high voltage ramp dVIdt, and 978-1-4244-1872-5/08/$25.00

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Section: F 13-kv Light-triggered Tandem Thyristor With Integrated Ovmentioning

confidence: 99%