No abstract

An IGBT is presented which is based on bulk silocon material without a buffer layer. In contrast to other devices the carrier lifetime was kept as high as possible. It is shown that such a device with a breakdown voltage of 1400 V and a short circuit capability of 1200 V at 20 V gate voltage has no higher or even less on-state and switching losses than a buffer layer device, if its backside p-emitter efficiency is kept low enough.

No abstract

No abstract

No abstract