Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

200 kVA compact IGBT modules with double-sided cooling for HEV and EV

“…2 shows a severe wafer warpage of 32 mm could be induced when the ultra thin wafers were coated with a thin layer of solder. IGBT with field stop (FS) structure offers a superior tradeoff between static and dynamic losses as compared with Punch-Through (PT) -IGBTs [5]. The typical thickness of 650V FS IGBT is in the range of 65 -75 um.…”

Failure mechanism of trench IGBT under short-circuit after turn-off

“…During short-circuit, the electrical runaway can occur at any distinct time leading in the most cases to the device failure. Depending on the device switching conditions, several types of shortcircuit can occur [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Almost no detail can be found in the literature concerning the device internal behaviour under the proposed short circuit event [6][7][8].…”

“…The failure mode A occurs at the beginning of the short circuit during the turn on. The reason can be the high applied voltage leading to early breakdown or to the latch-up phenomenon [4,5,12]. The failure mode B occurs during the on state of the device, between turn on and turn off.…”

“…The main origin is the second breakdown associated to the rapid increase of the intrinsic temperature [6,7,8,13]. The failure mode C occurs during the turn off transient, and [12] explains that this kind of failure can occur due to a dynamic latch-up. The failure mode D occurs several micro seconds after turn off.…”

A Study of Switching-Self-Clamping-Mode �SSCM� as an Over-voltage Protection Feature in High Voltage IGBTs

“…The dependence of the electric field on the effective background doping of modern SPT type IGBTs structures has led to the device experiencing new failure modes during turn-off as well as during short circuit operation of the IGBT [5]. The high levels of conducting electrons due to short circuit operation or pn-junction avalanche during turn-off can result in unbalanced carrier concentrations in the n-base.…”