Failure mechanism of trench IGBT under short-circuit after turn-off

Benmansour, Adel; Azzopardi, Stéphane; Martin, Jean-Christophe; Woirgard, Eric

doi:10.1016/j.microrel.2006.07.059

Cited by 19 publications

(12 citation statements)

References 14 publications

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“…There exist different IGBT short-circuit failure modes, described in [17]. Failures can occur at short-circuit turn-on, during the I SC conducting phase, during shortcircuit turn-off and after turn-off.…”

Section: Summary Of Destructive Conditions With Its Failure Patternsmentioning

confidence: 99%

Short-circuit ruggedness of high-voltage IGBTs

Lutz

Basler

2012

2012 28th International Conference on Microelectronics Proceedings

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The IGBT can run into different short-circuit types (SC I, SC II, SC III). Especially in SC II and III, an interaction between the gate drive unit and the IGBT takes place. A self-turnoff mechanism after short-circuit turn on can occur. Parasitic elements in the connection between the IGBT and the gate unit as well as asymmetrical wiring of devices connected in parallel are of effect to the short-circuit capability. In high-voltage IGBTs, filament formation can occur at short-circuit condition. Destructive measurements with its failure patterns and shortcircuit protection methods are shown.

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Section: Summary Of Destructive Conditions With Its Failure Patternsmentioning

confidence: 99%

Short-circuit ruggedness of high-voltage IGBTs

Lutz

Basler

2012

2012 28th International Conference on Microelectronics Proceedings

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“…These are the transition failure during turn-on or turn-off. In [10][11], short circuit destruction is observed several hundred microseconds after turning off the gate. The failure is described as thermal runaway caused by leakage current.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of Si IGBT short circuit capability at 200°C

Wang

2012

2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper investigates the short-circuit capability and the failure mechanisms of Si trench gate field-stop IGBT under high temperature operation conditions through experiments. First, the test circuits are proposed for IGBT short circuit capability evaluation in different types of short circuit conditions. A hardware setup is built accordingly, and used to evaluate experimentally the IGBT short circuit failures caused by thermal destruction, thermal runaway and latch-up at both 25 ˚C and 200 ˚C. The critical short circuit time is given for high temperature operation under different short circuit conditions. The experimental results show that although the critical short circuit time is reduced at 200 ˚C operation, it is still adequate for the protection circuit to shut down the devices safely. The Si trench gate field-stop IGBT exhibits good short circuit ruggedness at 200 ˚C operation.

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“…IGBTs are normally engaged in hard-switching applications as the device will switch high currents and voltages under different inductive loading conditions [1][2][3][4]. Therefore, the IGBTs have to be exposed to different standard tests to examine the IGBTs safe operating area (SOA).…”

Section: Introductionmentioning

confidence: 99%

“…This allows the stored energy to be diverted to protect the DUT. The majority of this type of tester reported in the literature is based upon detecting the collapse of the DUT voltage following DUT failure [1,7,8]. The iterative based testers rely on repeated testing under the identical conditions whilst gradually increasing the delay time before activating the protective action until either the failure occurs or the DUT passes.…”

Section: Introductionmentioning

confidence: 99%