Short-circuit ruggedness of high-voltage IGBTs

Lutz, Josef; Basler, Thomas

doi:10.1109/miel.2012.6222845

Cited by 34 publications

(13 citation statements)

References 14 publications

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“…However, besides reaching this thermal limit, additional transient failure modes can occur to instantly destabilize the IGBT under the short-circuit operation, which makes the specification of 10μs short-circuit withstand capability on longer valid. For example, the peak current failure [10][11] and self-turn-off failure [12][13] can drive the device into destruction instantly during the vce-desaturation process of short-circuit operation.…”

Section: One Of the Most Common Scenarios Of The Extreme Operating Comentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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IGBT short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss the recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, a 3D-SCSOA is introduced as the IGBT's operational boundary to divide the short-circuit failure modes of device into short-circuit VDC/Vrated-ISC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the 3D-SCSOA characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependency research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode researches of IGBT stands and is heading is provided.Index terms-High power IGBTs, Short-circuit failure mode, 3D-SCSOA, Self-heating, Temperature dependencyNone of the material in this paper has been published or is under consideration for publication elsewhere.

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Section: One Of the Most Common Scenarios Of The Extreme Operating Comentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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show abstract

“…The drain current increases rapidly and uncontrollably, as the parasitic gate-drain Miller capacitance is being charged [16]. • SC IΙΙ: This type of fault may occur when the device is operating in the third quadrant [20]. In this case, the drain current changes polarity, while the drain-source terminals support the entire DC-link voltage.…”

Section: Short-circuit Typesmentioning

confidence: 99%

Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications

Kampitsis

Papathanassiou

Manias

2015

Microelectronics Reliability

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“…This region is less important for IGBTs under power-cycling conditions as the load current during a reliability test is normally close to the rated current. However, the saturated current level of the IGBT is very important for short-circuit ruggedness as mentioned in [5,6].…”

Section: Modelling Of a Press-pack Igbtmentioning

confidence: 99%