2015 IEEE Energy Conversion Congress and Exposition (ECCE) 2015
DOI: 10.1109/ecce.2015.7310195
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Figure of merit for selecting super-junction MOSFETs in high efficiency voltage source converters

Abstract: Silicon super-junction MOSFETs have very low onstate resistances and fast switching characteristics. However, their use in voltage-source converters is hindered by the poor reverse recovery performance of their body drain diode and an adverse output capacitance characteristic. These both act to increase the overall switching loss. The on-state resistance and output capacitance characteristics of super junction devices are both related to the area of the silicon die. As this increases, the on-state resistance d… Show more

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Cited by 9 publications
(8 citation statements)
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“…The device selection was optimized in order to choose a suitable SJ MOSFET, trading off between conduction ( ( ) ) and switching ( ) loss characteristics using the figure of merit outlined in [20]. A range of devices from different manufacturers and numbers of devices in parallel were analyzed to determine the optimum combination which will achieve the least losses for an appropriate price.…”
Section: Power Circuitry and Predicted Resultsmentioning
confidence: 99%
“…The device selection was optimized in order to choose a suitable SJ MOSFET, trading off between conduction ( ( ) ) and switching ( ) loss characteristics using the figure of merit outlined in [20]. A range of devices from different manufacturers and numbers of devices in parallel were analyzed to determine the optimum combination which will achieve the least losses for an appropriate price.…”
Section: Power Circuitry and Predicted Resultsmentioning
confidence: 99%
“…The constant κ is effectively a figure of merit for a family of MOSFETs. In fact, if we integrate C OSS curve with respect to V and replace C OSS with the integrated charge, Q OSS , we obtain a well-known figure of merit: R ON • Q OSS [8]. However, most manufacturers do not provide Q OSS -V curves in the datasheets.…”
Section: Proposed Methodsmentioning
confidence: 99%
“…With respect to selection of switches, Fig. 14 shows a comparison based on datasheet parameters between the best in-class switches figures of merit [41]- [44], where gallium nitride (GaN) FETs show superior performance compared to the silicon superjunction and silicon carbide (SiC) counterparts.…”
Section: Resonant Inductor Designmentioning
confidence: 99%