Fill factor losses in ZnO/CdS/CuGaSe2 single-crystal solar cells

Kassis, A.; Saad, M.

doi:10.1016/j.solmat.2003.07.003

Cited by 51 publications

(20 citation statements)

References 6 publications

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“…It is used in various technological domains such as transparent electrodes, solar cells, gas sensors and surface acoustic wave devices [5,6]. Its low price compared with other materials makes it a good candidate for industrial applications [7].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Asmar

Juillaguet

Ramonda

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Asmar

Juillaguet

Ramonda

et al. 2005

Journal of Crystal Growth

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“…It is used in various technological domains such as transparent electrodes, solar cells, gas sensors and surface acoustic wave devices [5,6]. Its low price compared with other material makes it a good candidate for industrial applications [7].…”

Section: Introductionmentioning

confidence: 99%

Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

Asmar

Atanas

Ajaka

et al. 2005

Journal of Crystal Growth

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“…R.F or D.C sputtering [7,8], pulsed laser deposition [9], metal organic chemical vapor deposition (MOCVD) [10], spray pyrolysis [11] and others can be used to grow ZnO thin films on a variety of substrates. Its electrical and optical properties make it highly suitable for many applications in different devices, in particular in the fabrication of acousto-and electro-optical devices [12,13].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

Asmar¹,

Ferblantier²,

Mailly³

et al. 2005

phys. stat. sol. (c)

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Zinc oxide thin films have been grown on (100)-oriented silicon substrate by reactive e-beam evaporation and rf magnetron sputtering techniques and a comparative study is discussed in this paper. Structural, electrical and optical characteristics have been studied before and after annealing in air by measurements of X-ray diffraction, real parts of the dielectric coefficient, and electrical resistivity. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented with a full width at half maximum (FWMH) lower than 0.5°. The electrical resistivity is about 1011 Ω.cm for magnetron sputtered films and it increases from 10 -2 Ω.cm to about 10 9 Ω.cm after annealing at 750 °C for electron beam evaporated films. Ellipsometry measurements have shown some improvement of the real dielectric coefficient after annealing treatment at 750 °C of the ZnO evaporated by electron beam. The AFM images show that the surfaces of the e-beam evaporated ZnO and of the sputtered ZnO are relatively smooth.

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Fill factor losses in ZnO/CdS/CuGaSe2 single-crystal solar cells

Cited by 51 publications

References 6 publications

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

Structural and optical properties of ZnO fabricated by reactive e‐beam and rf magnetron sputtering techniques

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